KF10N60P

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=600V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.69 Qg(typ.)= 29.5nC @VGS=10V D N N A KF10N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KF10N60P O C F E G B Q I K M L J H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.2 + MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ) RATING SYMBOL KF10N60P VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 190 1.52 150 -55 150 D NN H UNIT KF10N60F 600 30 10 6 25 400 16.5 4.5 50 0.4 10* 6* 25* A V V O 1 2 3 1. GATE 2. DRAIN 3. SOURCE P Q TO-220AB KF10N60F A F C mJ mJ V/ns W W/ K O B E G DIM MILLIMETERS Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient L M J R RthJC RthJA 0.65 62.5 2.5 62.5 /W /W 1 ...