PF10N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L/TO-220F Plastic-Encapsulate MOSFETS CJP10N60,CJPF10N60 N-Channel Power MOSFET Description The C JP10N60/CJPF10N60 is a high volt age and high current power MOSFET , design ed to ha ve c haracteristics, such as fast switching time, low gate charge, lo w on-st ate resist ance and have rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES z Low Crss z Fast Switching z 100% avalanche tested 2.Drain TO-220-3L/TO-220F 1. GATE 2. DRAIN 3. SOURCE 1.Gate 3.Source Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VDS VGS ID 10 PD 2 RθJA 62.5 TJ Tstg -50 150 ~+150 Value 600 V ±30 A W ℃/W ℃ Unit C,Mar,2014 http://www.Datasheet4U.com Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage (note1) Gate-Body Leakage Current (note1) Zero Gate Voltage Drain Current Drain-Source On-State Resistance (note1) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Forward on Voltage(note1) Notes: 1. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤2%. Symbol V(BR) DSS...