DatasheetsPDF.com

20CTQ150TRRPBF Dataheets PDF



Part Number 20CTQ150TRRPBF
Manufacturers InternationalRectifier
Logo InternationalRectifier
Description SCHOTTKYRECTIFIER
Datasheet 20CTQ150TRRPBF Datasheet20CTQ150TRRPBF Datasheet (PDF)

Bulletin PD-20648 rev. C 09/04 20CTQ150 20CTQ150S 20CTQ150-1 SCHOTTKY RECTIFIER 20 Amp Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM @ tp = 5 µs sine VF TJ @ 10 Apk, TJ = 125°C (per leg) range Description/ Features Units A V A V This center tap Schottky ectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175° C junction temperature. Typical applications are in .

  20CTQ150TRRPBF   20CTQ150TRRPBF


Document
Bulletin PD-20648 rev. C 09/04 20CTQ150 20CTQ150S 20CTQ150-1 SCHOTTKY RECTIFIER 20 Amp Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM @ tp = 5 µs sine VF TJ @ 10 Apk, TJ = 125°C (per leg) range Description/ Features Units A V A V This center tap Schottky ectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. 175° C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability Values 20 150 1030 0.66 - 55 to 175 °C Case Styles 20CTQ150 20CTQ150S 20CTQ150-1 Base Common Cathode 2 Base Common Cathode 2 Base Common Cathode 2 1 Anode 2 Common Cathode 3 1 Anode Anode 2 Common Cathode 3 1 Anode Anode 2 Common Cathode 3 Anode TO-220AB D2PAK TO-262 www.irf.com 1 20CTQ150, 20CTQ150S, 20CTQ150-1 Bulletin PD-20648 rev. C 09/04 Voltage Ratings Parameters VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) 20CTQ150 20CTQ150S 20CTQ150-1 150 Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current IFSM EAS IAR * See Fig. 5 (Per Leg) (Per Device) Values 10 20 1030 180 2.45 0.7 Units A Conditions 50% duty cycle @ TC = 154°C, rectangular wave form 5µs Sine or 3µs Rect. pulse Following any rated load condition and with 10ms Sine or 6ms Rect. pulse rated V RRM applied TJ = 25 °C, IAS = 0.7 Amps, L = 10 mH Current decaying linearly to zero in 1 µsec Frequency limited by TJ max. VA = 1.5 x VR typical Max. Peak One Cycle Non-Repetitive Surge Current (Per Leg) * See Fig. 7 Non-Repetitive Avalanche Energy (Per Leg) Repetitive Avalanche Current (Per Leg) A mJ A Electrical Specifications Parameters VFM Max. Forward Voltage Drop (Per Leg) * See Fig. 1 (1) Typ. 0.80 0.90 0.63 0.73 Max. Units 0.88 1.0 0.66 0.77 25 5.0 280 8.0 10000 V V V V µA mA pF nH V/ µs Conditions @ 10A @ 20A @ 10A @ 20A TJ = 25 °C TJ = 125 °C @ 25°C TJ = 25 °C TJ = 125 °C VR = rated VR IRM CT LS Max. Reverse Leakage Current (Per Leg) * See Fig. 2 Typical Junction Capacitance (Per Leg) Typical Series Inductance (Per Leg) 3.0 2.7 - VR = 5VDC (test signal range 100kHz to 1Mhz) Measured lead to lead 5mm from package body (Rated VR) (1) Pulse Width < 300µs, Duty Cycle < 2% dv/dt Max. Voltage Rate of Change Thermal-Mechanical Specifications Parameters TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range Values -55 to 175 -55 to 175 2.0 1.0 0.50 2 (0.07) Min. Max. 6 (5) 12 (10) Units °C °C Conditions RthJC Max. Thermal Resistance Junction to Case (Per Leg) RthJC Max. Thermal Resistance Junction to Case (Per Package) RthCS Typical Thermal Resistance, Case to Heatsink wt T Approximate Weight Mounting Torque Marking Device °C/W DC operation °C/W DC operation °C/W Mounting surface , smooth and greased (only for TO-220) g (oz.) Kg-cm (Ibf-in) Case style TO-220 Case style D2-Pak Case style TO-262 20CTQ150 20CTQ150S 20CTQ150-1 2 www.irf.com 20CTQ150, 20CTQ150S, 20CTQ150-1 Bulletin PD-20648 rev. C 09/04 100 Reverse Current - I R (mA) 100 10 1 0.1 0.01 Tj = 175˚C 150˚C 125˚C 100˚C 75˚C 50˚C 25˚C Instantaneous Forward Current - I F (A) 0.001 0.0001 0 20 40 60 80 100 120 140 160 Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage (Per Leg) 10 1000 T J = 175˚C T J = 125˚C T J = 25˚C Junction Capacitance - C T (p F) Tj = 25˚C 100 1 0.2 0.4 0.6 0.8 10 1 1.2 1.4 1.6 1.8 2 0 40 80 120 160 Forward Voltage Drop - V FM (V) Fig. 1 - Max. Forward Voltage Drop Characteristics (Per Leg) Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage (Per Leg) 10 (°C/W) 1 Thermal Impedance Z D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Notes: thJC P DM t1 t2 0.1 Single Pulse (Thermal Resistance) 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc 0.01 0.00001 0.0001 0.001 0.01 t1 , Rectangular Pulse Duration (Seconds) 0.1 1 Fig. 4 - Max. Thermal Impedance ZthJC Characteristics (Per Leg) www.irf.com 3 20CTQ150, 20CTQ150S, 20CTQ150-1 Bulletin PD-20648 rev. C 09/04 180 Allowable Lead Temperature (°C) Allowable Power Loss (Watts) 10 9 8 7 6 5 4 3 2 1 0 0 170 DC D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC RMS Limit 160 150 Square wave (D = 0.50) 80% Rated Vr applied 140 see note (2) 130 0 2 4 6 8 10 12 14 16 Average Forward Current - I F(AV) (A) Fig. 5 - Maximum Average Forward Current Vs. Allowable Lead Temperature Non-Repetitive Surge Current - I FSM (A) 3 6 9 12 15 Average Forward Current - I F(AV) (A) Fig. 6 - Maximum Average Forward Dissipation Vs. Average Forward Current 1000 At Any Rated Load Condition And W.


20CTQ150TRR 20CTQ150TRRPBF 20DL2C41A


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)