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Ordering number:ENN778F
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1207/2SC2909
High-Voltage...
www.DataSheet.co.kr
Ordering number:ENN778F
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1207/2SC2909
High-Voltage Switching AF 60W Predriver Applications
Features
· Adoption of FBET process. · High breakdown voltage. · Excellent linearity of h FE and small C ob. · Fast switching speed.
Package Dimensions
unit:mm 2003B
[2SA1207/2SC2909]
5.0 4.0 4.0
0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3
5.0
( ) : 2SA1207
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Pl arameter CV ollector-to-Base Voltage CV ollector-to-Emitter Voltage EV mitter-to-Base Voltage CI ollector Current CI ollector Current (Pulse) CP ollector Dissipation Jj unction Temperature Sg torage Temperature Ss ymbo CBO CEO EBO C CP C T Tst Cs ondition
1.3
1.3
1 : Emitter 2 : Collector 3 : Base SANYO : NP
Rt ating (V –)180 (V –)160 (V –)5 (A –)70 (A –)140 6W 00 150 –55 to +150
Uni
m m m
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter CI ollector Cutoff Current EI mitter Cutoff Current Dh C Current Gain Gf ain-Bandwidth Product OC utput Capacitance CV ollector-to-Emitter Saturation Voltage Symbol CBO EBO FE T ob CE(sat) VCB=(–)80V, IE=1 0 VEB=(–)4V, IC=1 0 VCE=(–)5V, IC=* (–)10mA VCE=(–)10V, IC=0 (–)10mA VCB=0 (–)10V, f=1MHz IC=(–)30mA, IB=(–)3mA 1* 00 1z 5 (F 2.5)2. 0 .0 8 (–0.14) 0 .3 (–0.4) Conditions Ratings mp in tx y ma (A –)0. (A –)0. 400 MH p V Unit µ µ
* : The 2SA1207/2SC2909 are classified by 10mA hFE as follows :
RR ank hFE 10 00 to 200 S 10 4 0 to 2 8 T 200 to 40
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