IXTA50N25T

Trench Gate Power MOSFET IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T N-Channel Enhancement Mode VDSS = ID25 = RDS(on) ≤ 250V 50A 60mΩ TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G S D (Tab) GD S D (Tab) Symbol VDSS VDGR V GSM ID25 IDM IA EAS PD TJ TJM Tstg TL Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Transient Maximum Ratings 250 V 250 V ± 30 V TC = 25°C TC = 25°C, Pulse Width Limited by TJM 50 A 130 A TC = 25°C TC = 25°C 5 A 1.5 J TC = 25°C 400 W -55 ... +150 °C 150 °C -55 ... +150 °C 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 s 300 °C 260 °C Mounting Torque (TO-220, TO-3P &TO-247) 1.13 / 10 Mounting Force (TO-263) 10..65 / 2.2..14.6 Nmlb.in. N/lb. TO-263 TO-220 TO-3P TO-247 2.5 g 3.0 g 5.5 g 6.0 g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ . Max. 250 V 3.0 5.0 V ± 100 nA 1 μA 150 μA 60 mΩ G D S D (Tab) TO-247 (IXTH) G DS D (Tab) G = Gate S = Source D = Drain Tab = Drain Features z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Rectifier z Low RDS(on) Advantages z High Power Density z Easy to Mount z Space Savings Applications z DC-DC Coverters z Battery Chargers z Switch-Mode and Resonant-Mode Power Supplies z DC ...