2SA1036
Elektronische Bauelemente -0.5A, -40V PNP Silicon General Purpose Transistor
RoHS Compliant Product A suffix of...
2SA1036
Elektronische Bauelemente -0.5A, -40V
PNP Silicon General Purpose
Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen and lead free
FEATURES
IC Max.= -500 mA Low VCE(sat). Ideal for low-voltage operation.
3
SOT-23
A
L
3
CLASSIFICATION OF hFE
Product-Rank Range Marking 2SA1036-P 82~180 HP 2SA1036-Q 120~270 HQ 2SA1036-R
K
1
Top View
2
C B
1
E
2
180~390 HR
F
D
G
REF. A B C D E F
Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50
H
REF. G H J K L
J
Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02
PACKAGE INFORMATION
Package SOT-23 MPQ 3K LeaderSize 7’ inch
Collector
3 1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Total Power Dissipation Junction & Storage Temperature
Symbol
VCBO VCEO VEBO IC PD TJ, TSTG
Ratings
-40 -32 -5 -500 150 150, -55 ~ 150
Unit
V V V mA mW ℃
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) hFE fT COB
Min.
-40 -32 -5 82 -
Typ.
200 7
Max.
-1 -1 -0.4 390 -
Unit
V V V μA μA V
Test Conditions
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