2SA1036

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z Larg e IC.ICMAX. =-500mA. z Low Production specification 2SA1036 Pb Lead-free VCE(sat). Ideal for low-voltage operation. APPLICATIONS z Ideal for low-voltage operation. S OT-23 ORDERING INFORMATION Type No. 2SA1 036 Marking HP,HQ,HR Package Code SOT -23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value -40 -32 -5 -500 200 -55~150 Units V V V mA mW ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC012 Rev.A www.galaxycn.com 1 http://www.Datasheet4U.com BL Galaxy Electrical Silicon Epitaxial Planar Transistor Parameter S Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage ymbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) Test conditions IC=-100μA,IE=0 -40 IC=-1mA,IB=0 -32 IE=-100μA,IC=0 -5 VCB=-20V,IE=0 VEB=-4V,IC=0 VCE=-3V,IC=-10mA 82 IC=-100mA, IB=-10mA VCE=-5V, IC=-20mA f=100MHz Production specification 2SA1036 MIN TYP MAX UNIT V V V -1 -1 390 -0.4 V μA μA Transition frequency fT 200 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 7 pF CLASSIFICATION OF h Rank P Range 82-1 FE(...