HIGH EFFICIENCY DIODE STACK
20DL2C41A,20FL2C41A,20GL2C41A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
20DL2C41A,20FL2C41A,20GL...
Description
20DL2C41A,20FL2C41A,20GL2C41A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
20DL2C41A,20FL2C41A,20GL2C41A
Switching Mode Power Supply Applications Converter & Chopper Applications
Unit: mm
z Repetitive Peak Reverse Voltage: VRRM = 200 V, 300 V, 400 V z Average Output Rectified Current: IO = 20 A z Ultra Fast Reverse-Recovery Time: trr = 35 ns (Max) z Low Switching Losses and Output Noise
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
20DL2C41A
200
Repetitive Peak Reverse Voltage
20FL2C41A
VRRM
300
V
20GL2C41A
400
Average Output Rectified Current
IO
20 A
Peak One Cycle Surge Forward Current (Non Repetitive)
IFSM
100 (50 Hz) 110 (60 Hz)
A
Junction Temperature
Tj
−40 to 150
°C
JEDEC
―
Storage Temperature Range
Tstg
−40 to 150
°C
JEITA
―
Screw Torque
− 0.8 N·m TOSHIBA 12-16D1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 4.85 g (typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Pola...
Similar Datasheet