MMBT3904

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 MMBT3904 NPN switching transistor Product data sheet Supersedes data of 2002 Oct 04 2004 Feb 03 http://www.Datasheet4U.com NXP Semiconductors Product data sheet NPN switching transistor FEATURES Collector current capability IC = 200 mA Collector-emitter voltage VCEO = 40 V. APPLICATIONS General switching and amplification. DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: MMBT3906. MARKING TYPE NUMBER MMBT3904 Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = W: Made in China. Top view MMBT3904 QUICK REFERENCE DATA SYMBOL VCEO IC PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) MAX. 40 200 UNIT V mA MARKING CODE(1) 7A∗ handbook, halfpage 3 3 1 2 1 2 MAM255 Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME MMBT3904 − DESCRIPTION plastic surface mounted package; 3 leads VERSION SOT23 2004 Feb 03 2 NXP Semiconductors Product data sheet NPN switching transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500 PARAMETER collector-bas...