Document
SMBT3904...MMBT3904
NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package • Complementary types: SMBT3906... MMBT3906 • SMBT3904S: For orientation in reel see package information below • Pb-free (RoHS compliant) package • Qualified according AEC Q101
Type SMBT3904/MMBT3904 SMBT3904S
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation-
Marking s1A s1A 1=B
Pin Configuration 2=E 3=C -
Package SOT23
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Symbol VCEO VCBO VEBO IC Ptot
Value 40 60 6 200 330 250
Unit V
mA mV
TS ≤ 71°C, SOT23, SMBT3904 TS ≤ 115°C, SOT363, SMBT3904S Junction temperature Storage temperature
Thermal Resistance Parameter
Tj Tstg
Symbol RthJS
150 -65 ... 150
Value ≤ 240 ≤ 140
°C
Junction - soldering SMBT3904S
point1)
Unit K/W
SMBT3904/MMBT3904
1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
1
2012-08-21
http://www.Datasheet4U.com
SMBT3904...MMBT3904
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 40 IC = 1 mA, IB = 0
Unit
V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO V(BR)EBO ICBO hFE
60 6 -
-
50 nA -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
VCB = 30 V, IE = 0
DC current gain1)
IC = 100 µA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V
40 70 100 60 30
VCEsat
-
300 V 0.2 0.3 0.85 0.95
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA
VBEsat
Base emitter saturation voltage1)
IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA
1Pulse
0.65 -
test: t < 300µs; D < 2%
2
2012-08-21
SMBT3904...MMBT3904
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Delay time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Rise time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Storage time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Fall time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Noise figure IC = 100 µA, VCE = 5 V, f = 1 kHz, ∆ f = 200 Hz, RS = 1 kΩ F 5 dB tf 50 tstg 200 tr 35 td 35 ns Ceb 8 Ccb 3.5 pF fT 300 MHz Symbol min. Values typ. max. Unit
3
2012-08-21
SMBT3904...MMBT3904
Test circuits Delay and rise time
+3.0 V
300 ns
D = 2% +10.9 V 0 10 k Ω -0.5 V
275 Ω
C <4.0 pF
<1.0 ns
EHN00061
Storage and fall time
+3.0 V
t1
10 < t 1 < 500 µs D = 2% +10.9 V 0 10 kΩ
275 Ω
C 1N916 <4.0 pF
-9.1 V
<1.0 ns
EHN00062
4
2012-08-21
SMBT3904...MMBT3904
DC current gain hFE = ƒ(IC) VCE = 1 V, normalized
10 3
Saturation voltage IC = ƒ(VBEsat ; VCEsat) hFE = 10
EHP00756
2
ΙC
125 °C
mA 10 2 5
hFE
25 °C
V CE
V BE
10 2
-55 °C
10 1 5
10 1 -5 10
10
-4
10
-3
10
-2
10
-1
10 mA
0
10 0
0
0.2
0.4
0.6
IC
0.8 1.0 V 1.2 V BE sat , V CE sat
Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB)
9
pF
Total power dissipation P tot = ƒ(TS) SMBT3904/MMBT3904
360
mW
300
CCB(CEB )
7
270
Ptot
CEB CCB
6 5 4 3 2 1 0 0
240 210 180 150 120 90 60 30
4
8
12
16
A
22
0 0
15
30
45
60
75
90 105 120
VCB(VEB
°C 150 TS
5
2012-08-21
SMBT3904...MMBT3904
Total power dissipation P tot = ƒ(TS) SMBT3904S
300
mW
Permissible Pulse Load RthJS = ƒ(tp) SMBT3904/ MMBT3904
10 3
K/W
250 225 10 2
Ptot
200 175 150 125 100 75 50 25 0 0 15 30 45 60 75 90 105 120 °C 150
RthJS
10 1
10 0
D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
TS
tp
Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) SMBT3904/MMBT3904
10 3 Ptot max Ptot DC
tp D= T tp T
EHP00935
Permissible Puls Load RthJS = ƒ (t p) SMBT3904S
10 3
K/W
10 2
10 2 5
10 1 5
D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 1
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
10 tp
-1
s 10
0
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
6
2012-08-21
SMBT3904...MMBT3904
Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) SMBT3904S
10 3
Delay time td = ƒ(IC) Rise time tr = ƒ(IC)
EHP00761
10 3 ns t r ,t d
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
Ptotmax/PtotDC
-
tr td 10 2
h FE = 10
10 2
VCC = 3 V
40 V 15 V 10 1 V BE = 2 V 0V
10 1
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
10 0 0 10
5 10 1
5 10 2
mA 10 3
ΙC
Storage time tstg = ƒ(IC)
Fall time tf = ƒ(IC)
10 3 ns ts 25 C 125 C 10 2 h FE = 20 10
EHP00762
10 3 ns tf
EHP00763
h FE = 20 10
10
2
25 C 125 C VCC = 40 V
h FE = 20
10 1
10 1
h FE = 10
10 0 0 10
5 10 1
5 10 2
mA 10 3
.