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MMBT3904 Dataheets PDF



Part Number MMBT3904
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description NPN Silicon Switching Transistors
Datasheet MMBT3904 DatasheetMMBT3904 Datasheet (PDF)

SMBT3904...MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package • Complementary types: SMBT3906... MMBT3906 • SMBT3904S: For orientation in reel see package information below • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type SMBT3904/MMBT3904 SMBT3904S Maximum Ratings Parameter Collector-emitter voltage Col.

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SMBT3904...MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package • Complementary types: SMBT3906... MMBT3906 • SMBT3904S: For orientation in reel see package information below • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type SMBT3904/MMBT3904 SMBT3904S Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation- Marking s1A s1A 1=B Pin Configuration 2=E 3=C - Package SOT23 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Symbol VCEO VCBO VEBO IC Ptot Value 40 60 6 200 330 250 Unit V mA mV TS ≤ 71°C, SOT23, SMBT3904 TS ≤ 115°C, SOT363, SMBT3904S Junction temperature Storage temperature Thermal Resistance Parameter Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 240 ≤ 140 °C Junction - soldering SMBT3904S point1) Unit K/W SMBT3904/MMBT3904 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2012-08-21 http://www.Datasheet4U.com SMBT3904...MMBT3904 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 40 IC = 1 mA, IB = 0 Unit V Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO V(BR)EBO ICBO hFE 60 6 - - 50 nA - Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 DC current gain1) IC = 100 µA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V 40 70 100 60 30 VCEsat - 300 V 0.2 0.3 0.85 0.95 Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VBEsat Base emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA 1Pulse 0.65 - test: t < 300µs; D < 2% 2 2012-08-21 SMBT3904...MMBT3904 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Delay time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Rise time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Storage time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Fall time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Noise figure IC = 100 µA, VCE = 5 V, f = 1 kHz, ∆ f = 200 Hz, RS = 1 kΩ F 5 dB tf 50 tstg 200 tr 35 td 35 ns Ceb 8 Ccb 3.5 pF fT 300 MHz Symbol min. Values typ. max. Unit 3 2012-08-21 SMBT3904...MMBT3904 Test circuits Delay and rise time +3.0 V 300 ns D = 2% +10.9 V 0 10 k Ω -0.5 V 275 Ω C <4.0 pF <1.0 ns EHN00061 Storage and fall time +3.0 V t1 10 < t 1 < 500 µs D = 2% +10.9 V 0 10 kΩ 275 Ω C 1N916 <4.0 pF -9.1 V <1.0 ns EHN00062 4 2012-08-21 SMBT3904...MMBT3904 DC current gain hFE = ƒ(IC) VCE = 1 V, normalized 10 3 Saturation voltage IC = ƒ(VBEsat ; VCEsat) hFE = 10 EHP00756 2 ΙC 125 °C mA 10 2 5 hFE 25 °C V CE V BE 10 2 -55 °C 10 1 5 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 mA 0 10 0 0 0.2 0.4 0.6 IC 0.8 1.0 V 1.2 V BE sat , V CE sat Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) 9 pF Total power dissipation P tot = ƒ(TS) SMBT3904/MMBT3904 360 mW 300 CCB(CEB ) 7 270 Ptot CEB CCB 6 5 4 3 2 1 0 0 240 210 180 150 120 90 60 30 4 8 12 16 A 22 0 0 15 30 45 60 75 90 105 120 VCB(VEB °C 150 TS 5 2012-08-21 SMBT3904...MMBT3904 Total power dissipation P tot = ƒ(TS) SMBT3904S 300 mW Permissible Pulse Load RthJS = ƒ(tp) SMBT3904/ MMBT3904 10 3 K/W 250 225 10 2 Ptot 200 175 150 125 100 75 50 25 0 0 15 30 45 60 75 90 105 120 °C 150 RthJS 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) SMBT3904/MMBT3904 10 3 Ptot max Ptot DC tp D= T tp T EHP00935 Permissible Puls Load RthJS = ƒ (t p) SMBT3904S 10 3 K/W 10 2 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 tp -1 s 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 2012-08-21 SMBT3904...MMBT3904 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) SMBT3904S 10 3 Delay time td = ƒ(IC) Rise time tr = ƒ(IC) EHP00761 10 3 ns t r ,t d D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Ptotmax/PtotDC - tr td 10 2 h FE = 10 10 2 VCC = 3 V 40 V 15 V 10 1 V BE = 2 V 0V 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 10 0 0 10 5 10 1 5 10 2 mA 10 3 ΙC Storage time tstg = ƒ(IC) Fall time tf = ƒ(IC) 10 3 ns ts 25 C 125 C 10 2 h FE = 20 10 EHP00762 10 3 ns tf EHP00763 h FE = 20 10 10 2 25 C 125 C VCC = 40 V h FE = 20 10 1 10 1 h FE = 10 10 0 0 10 5 10 1 5 10 2 mA 10 3 .


MMBT3904 MMBT3904 LMV331


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