SIA446DJ

SiA446DJ www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 150 RDS(on) () MAX. 0.177 at VGS = 10 V 0.185 at VGS = 7.5 V 0.250 at VGS = 6 V ID (A) a 7.7 7.6 4 4.3 nC Qg (TYP.) FEATURES ThunderFET® technology optimizes balance of RDS(on), Qg, Qsw and Qoss 100 % Rg and UIS tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® SC-70-6L Single S 4 D 5 D 6 APPLICATIONS DC/DC converters / boost converters Synchronous rectification Power management 2 D 1 D D S LED backlighting G Marking Code: AV Ordering Information: SiA446DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER S Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e TJ, Tstg PD IDM IS IAS EAS ID YMBOL VDS VGS LIMIT 150 ± 20 7.7 6.2 3.3 b, c 2.6 b, c 10 12 2.9 b, c 7 2.5 19 12 3.5 b, c 2.2 b, c -55 to 150 260 °C W mJ A UNIT V THERMAL RESISTANCE RATINGS PARAMETER SYMB Maximum Junction-to-Ambient b, f Maximum Junction-to-Case (Drain) t5s Steady Stat...