PHOTOTRANSISTOR PHOTOCOUPLER. EL816 Datasheet

EL816 PHOTOCOUPLER. Datasheet pdf. Equivalent

EL816 Datasheet
Recommendation EL816 Datasheet
Part EL816
Description 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
Feature EL816; 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER EL816 Series Schematic Features: • Current transfer ratio (C.
Manufacture Everlight Electronics
Datasheet
Download EL816 Datasheet




Everlight Electronics EL816
4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL816 Series
Schematic
Features:
Current transfer ratio
(CTR: 50~600% at IF =5mA, VCE =5V)
(CTR: 63~320% at IF =10mA, VCE =5V)
High isolation voltage between inputs
and output (Viso=5000 V rms)
Creepage distance >7.62 mm
Operating temperature up to +110°C
Compact small outline package
Pb free and RoHS compliant.
UL approved (No. E214129)
VDE approved (No. 132249)
SEMKO approved
NEMKO approved
DEMKO approved
FIMKO approved
CSA approved
Pin Configuration
1. Anode
2. Cathode
3. Emitter
4. Collector
Description
The EL816 series of devices each consist of an infrared emitting diodes,
optically coupled to a phototransistor detector.
They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.
Applications
Programmable controllers
System appliances, measuring instruments
Telecommunication equipments
Home appliances, such as fan heaters, etc.
Signal transmission between circuits of different potentials and impedances
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Everlight Electronics EL816
DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL816 series
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Rating
Unit
Input
Forward current
Peak forward current (1us, pulse)
Reverse voltage
Power Dissipation
No derating required up to Ta = 100°C
IF
IFP
VR
PD
60 mA
1A
6V
100 mW
Power dissipation
Derating factor (above Ta = 80 C)
Output
Collector current
Collector-Emitter voltage
Emitter-Collector voltage
Total Power Dissipation
Isolation Voltage*1
Operating Temperature
Storage Temperature
Soldering Temperature*2
PC
IC
VCEO
VECO
PTOT
VISO
TOPR
TSTG
TSOL
150
5.8
50
80
6
200
5000
-55 to 110
-55 to 125
260
mW
mW/ C
mA
V
V
mW
Vrms
°C
°C
°C
Notes:
*1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 are shorted together, and pins 3, 4 are shorted together.
*2 For 10 seconds
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Everlight Electronics EL816
DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL816 series
Electro-Optical Characteristics (Ta=25°C unless specified otherwise)
Input
Parameter
Forward Voltage
Reverse Current
Input capacitance
Symbol Min. Typ. Max. Unit
VF - 1.2 1.4 V
IR - - 10 µA
Cin
-
30 250
pF
Condition
IF = 20mA
VR = 4V
V = 0, f = 1kHz
Output
Parameter
Symbol
Min
Typ. Max.
Unit
Condition
Collector-Emitter dark
current
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
ICEO
BVCEO
BVECO
-
80
6
- 100 nA VCE = 20V, IF = 0mA
--
V
IC = 0.1mA
--
V
IE = 0.1mA
Transfer Characteristics
Parameter
Symbol
Min
Typ. Max.
Unit
Condition
Current
Transfer
ratio
EL816
EL816A
EL816B
EL816C
EL816D
EL816X
EL816Y
EL816I
EL816J
EL816K
EL816I
EL816J
EL816K
CTR
CTR
50
80
130
200
300
100
150
63
100
160
22
34
56
- 600
- 160
- 260
- 400 % IF = 5mA ,VCE = 5V
- 600
- 200
- 300
- 125
- 200
IF = 10mA ,VCE = 5V
- 320
%
--
--
--
IF = 1mA ,VCE = 5V
Revi3sion Copy:rig1h2t© 2010,Everlight All Rights Reserved. Release Date : Nov13,2013. Issue NoR: DePlCe-a00s0e00D09aRteev:.2102 13-11-2w2w1w0.:e5v9e:r0li1g.h0t.com
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Expired Period: Forever







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