Silicon Standard Recovery Diode
S70K thru S70QR
Silicon Standard Recovery Diode
Features
• High Surge Capability • Types up to 1600 V VRRM DO-5 Package
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Description
S70K thru S70QR
Silicon Standard Recovery Diode
Features
High Surge Capability Types up to 1600 V VRRM DO-5 Package
VRRM = 100 V - 1600 V IF = 70 A
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 140 °C TC = 25 °C, tp = 8.3 ms Conditions
("R" devices have leads reversed)
S70K (R) 800 560 800 70 1250 -65 to 180 -65 to 180 S70M (R) 1000 700 1000 70 1250 -65 to 180 -65 to 180 S70Q (R) 1200 840 1200 70 1250 -65 to 180 -65 to 180 Unit V V V A A °C °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Diode forward voltage Reverse current Symbol VF IR Conditions IF = 70 A, Tj = 25 °C VR = 100 V, Tj = 25 °C VR = 100 V, Tj = 180 °C S70K (R) 1.1 10 99 0.65 S70M (R) 1.1 10 S70Q (R) 1.1 10 9 0.65 Unit V μA mA °C/W
Thermal characteristics
Thermal resistance, junction case RthJC 0.65
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S70K thru S70QR
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