V6WL45C

V6WL45C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.34 V at IF = 3 A FEATURES Trench MOS Schottky technology Ideal for automated placement Low forward voltage drop, low power losses High efficiency operation K Dual Trench MOS Barrier Schottky Rectifier TMBS® TO-252 (D-PAK) Meets MSL level 1 , per J-STD- 020, LF maximum peak of 260 °C Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 A A V6WL45C A A K HEATSINK TYPICAL APPLICATIONS For use in high frequency DC/D C conve rters, switching power supplies, freewheelin g diodes, O R-ing diode, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 3 A (TA = 125 °C) TJ max. Package Diode variation 2x3A 45 V 80 A 0.34 V 150 °C TO-252 (D-PAK) Single Case: TO-252 (D-PAK) Molding compound mee ts UL 94 V-0 fl ammability rating Base P/N- M3 - ha logen-free, RoHS- compliant, an d commercial grade Terminals: Matte t in plated l eads, sol derable pe r J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode IF(AV) IFSM TJ, TSTG SYMBOL VRRM V6WL45C 45 6 A 3 80 - 40 to + 150 A °C UNIT V Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating junction and storage te...