SWITCHING TRANSISTORS. 2N2222 Datasheet

2N2222 TRANSISTORS. Datasheet pdf. Equivalent

Part 2N2222
Description NPN SILICON PLANAR SWITCHING TRANSISTORS
Feature Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILI.
Manufacture CDIL
Datasheet
Download 2N2222 Datasheet



2N2222
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR SWITCHING TRANSISTORS
2N2221
2N2222
TO-18
Metal Can Package
Switching and Linear Application DC and VHF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
2N2221, 22
Collector Emitter Voltage
VCEO
30
Collector Base Voltage
VCBO
60
Emitter Base Voltage
VEBO
5
Collector Current Continuous
IC 800
Power Dissipation @Ta=25ºC
PD 500
Derate Above 25ºC
2.28
Power Dissipation @ Tc=25ºC
PD 1.2
Derate Above 25ºC
6.85
Operating and Storage Junction
Tj, Tstg
-65 to +200
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION
VALUE
MIN MAX
Collector Emitter Breakdown Voltage BVCEO IC=10mA,IB=0
30
Collector Base Breakdown Voltage
BVCBO IC=10µA.IE=0
60
Emitter Base Breakdown Voltage
BVEBOf IE=10µA, IC=0
5V
Collector Leakage Current
ICBO VCB=50V, IE=0
10
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
VCB=50V, IE=0
Ta=150 º C
VCE(Sat)*I C=150mA,IB=15mA
IC=500mA,IB=50mA
VBE(Sat)*I C=150mA,IB=15mA
IC=500mA,IB=50mA
0.6
10
0.4
1.6
1.3
2.6
UNIT
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
UNIT
V
V
nA
µA
V
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 4
http://www.Datasheet4U.com



2N2222
NPN SILICON PLANAR SWITCHING TRANSISTORS
2N2221
2N2222
TO-18
Metal Can Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
2221
MIN MAX
DC Current Gain
DYNAMIC CHARACTERISTICS
hFE IC=0.1mA,VCE=10V*
IC=1mA,VCE=10V
IC=10mA,VCE=10V*
IC=150mA,VCE=1V*
IC=150mA,VCE=1V*
IC=500mA,VCE=10V*
20
25
35
20
40
20
120
Transition Frequency
fT IC=20mA, VCE=20V
f=100MHz
250
Output Capacitance
Cob VCB=10V, IE=0
f=100KHz
8
Input Capacitance
Cib VEB=0.5V, IC=0
f=100kHz
30
2222
MIN MAX
35
50
75
50
100 300
30
UNIT
250 MHz
8 pF
30 pF
SWITCHING CHARACTERISTICS
Delay time
Rise time
Storage time
Fall time
td
IC=150mA,IB1=15mA
tr VCC=30V,VBE(off)=0.5V
ts
IC=150mA, IB1=15mA
tf IB2=15mA, VCC=30V
*Pulse Condition: Pulse Width <300µs, Duty Cycle <2%
10 ns
25 ns
225 ns
60 ns
Continental Device India Limited
Data Sheet
Page 2 of 4





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