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IXDI514 Dataheets PDF



Part Number IXDI514
Manufacturers IXYS
Logo IXYS
Description 14 Ampere Low-Side Ultrafast MOSFET Drivers
Datasheet IXDI514 DatasheetIXDI514 Datasheet (PDF)

Preliminary Technical Information IXDI514 / IXDN514 14 Ampere Low-Side Ultrafast MOSFET Drivers Features • Built using the advantages and compatibility TM of CMOS and IXYS HDMOS processes • Latch-Up Protected over entire Operating Range • High Peak Output Current: 14A Peak • Wide Operating Range: 4.5V to 30V • -55°C to +125°C Extended Operating Temperature • High Capacitive Load Drive Capability: 15nF in <30ns • Matched Rise And Fall Times • Low Propagation Delay Time • Low Output Impedance • L.

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Preliminary Technical Information IXDI514 / IXDN514 14 Ampere Low-Side Ultrafast MOSFET Drivers Features • Built using the advantages and compatibility TM of CMOS and IXYS HDMOS processes • Latch-Up Protected over entire Operating Range • High Peak Output Current: 14A Peak • Wide Operating Range: 4.5V to 30V • -55°C to +125°C Extended Operating Temperature • High Capacitive Load Drive Capability: 15nF in <30ns • Matched Rise And Fall Times • Low Propagation Delay Time • Low Output Impedance • Low Supply Current • Two Drivers in Single Chip General Description The IXDI514 and IXDN514 are high speed high current gate drivers specifically designed to drive the largest IXYS MOSFETs & IGBTs to their minimum switching time and maximum parctical frequency limits. The IXDI514 and IXDN514 can source and sink 14 Amps of Peak Current while producing voltage rise and fall times of less than 30ns. The inputs of the Drivers are compatible with TTL or CMOS and are virtually immune to latch up over the entire operating range! Patented* design innovations eliminate cross conduction and current "shoot-through". Improved speed and drive capabilities are further enhanced by very quick & matched rise and fall times. The IXDI514 is configured as a Inverting Gate Driver, and the IXDN514 is configured as a Non-Inverting Gate Driver. The IXDI514 and IXDN514 are each available in the 8-Pin PDIP (PI) package, the 8-Pin SOIC (SIA) package, and the 6-Lead DFN (D1) package, (which occupies less than 65% of the board area of the 8-Pin SOIC). Applications • • • • • • • • • • Driving MOSFETs and IGBTs Motor Controls Line Drivers Pulse Generators Local Power ON/OFF Switch Switch Mode Power Supplies (SMPS) DC to DC Converters Pulse Transformer Driver Class D Switching Amplifiers Power Charge Pumps *United States Patent 6,917,227 Ordering Information Part Number IXDI514PI IXDI514SIA IXDI514SIAT/R IXDI514D1 IXDI514D1T/R IXDN514PI IXDN514SIA IXDN514SIAT/R IXDN514D1 IXDN514D1T/R Description 14A Low Side Gate Driver I.C. 14A Low Side Gate Driver I.C. 14A Low Side Gate Driver I.C. 14A Low Side Gate Driver I.C. 14A Low Side Gate Driver I.C. 14A Low Side G ate Driver I.C. 14A Low Side Gate Driver I.C. 14A Low Side Gate Driver I.C. 14A Low Side Gate Driver I.C. 14A Low Side Gate Driver I.C. Package Type 8-Pin PDIP 8-Pin SOIC 8-Pin SOIC 6-Lead DFN 6-Lead DFN 8-Pin P DIP 8-Pin SOIC 8-Pin SOIC 6-Lead D FN 6-Lead DFN Packing Style Tube Tube 13” Tape and Reel 2” x 2” Waffle P ack 13” Tape and Reel Tube Tube 13” Tape and Reel 2” x 2” Waffle Pack 13” Tape and Reel Pack Qty 50 94 2500 56 2500 50 94 2500 56 2500 Conf igur ation Inverting Non-Inverting NOTE: All parts are lead-free and RoHS Compliant Copyright © 2006 IXYS CORPORATION All rights reserved DS99672(01/07) http://www.Datasheet4U.com First Release IXDI514 / IXDN514 Figure 1 - IXDI514 Inverting 14A Gate Driver Functional Block Diagram Vcc Vcc P IN ANTI-CROSS CONDUCTION CIRCUIT * OUT N GND GND Figure 2 - IXDN514 14A Non-Inverting Gate Driver Functional Block Diagram Vcc Vcc P IN ANTI-CROSS CONDUCTION CIRCUIT * * OUT N GND GND * United States Patent 6,917,227 Copyright © 2006 IXYS CORPORATION All rights reserved 2 IXDI514 / IXDN514 Absolute Maximum Ratings (1) Parameter Supply Voltage All Other Pins Junction Temperature Storage Temperature Lead Temperature (10 Sec) Value 35 V -0.3 V to VCC + 0.3V 150 °C -65 °C to 150 °C 300 °C Operating Ratings (2) Parameter Value Operating Supply Voltage 4.5V to 30V Operating Temperature Range -55 °C to 125°C Package Thermal Resistance* θJ-A (typ) 125 °C/W 8-Pin PDIP (PI) 8-Pin SOIC (SIA) θJ-A(typ) 200 °C/W 6-Lead DFN (D1) θJ-A(typ) 125-200 °C/W θJ-C(max) 1.5 °C/W 6-Lead DFN (D1) 6-Lead DFN (D1) θJ-S(typ) 5.8 °C/W Electrical Characteristics @ TA = 25 oC (3) Unless otherwise noted, 4.5V ≤ VCC ≤ 30V . All voltage measurements with respect to GND. IXD_514 configured as described in Test Conditions . Symbol VIH VIL VIN IIN VOH High VOL ROH Out ROL Out IPEAK IDC Co tR Ri tF tONDLY OntOFFDLY Of VCC Po ICC Parameter High input voltage Low input voltage Input voltage range Input current output voltage Low output voltage put resistance @ Output high put resistance @ Output Low Peak output current ntinuous output current se time Fall time time propagation delay f-time propagation delay wer supply voltage Power supply current Test Conditions 4.5V ≤ VCC ≤ 18V 4.5V ≤ VCC ≤ 18V Min 2.5 Typ(4) M ax 1.0 Units V V V µA V V mΩ mΩ A -5 0V ≤ VIN ≤ VCC -10 VCC - 0.025 0. IOUT = 10mA, VCC = 18V IOUT = 10mA, VCC = 18V VCC is 18V Limited by package power dissipation CL=15nF Vcc=18V CL=15nF Vcc=18V CL=15nF Vcc=18V CL=15nF Vcc=18V 6 00 600 14 VCC + 0.3 10 025 1000 1000 4 23 21 29 29 4.5 25 22 30 31 18 0 40 50 30 50 30 3 10 10 A ns ns ns ns V mA µA µA VIN = 3.5V VIN = 0V VIN = + VCC 1 IXYS reserves the right to change limits, test conditions, and dimensions. 3 IXDI514 / IXDN514 Electrical Characteristics @ temperatures over -55 oC to 125 oC (3) Unle.


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