Power MOSFET
Advance Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
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Description
Advance Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTH440N055T2 IXTT440N055T2
VDSS ID25
RDS(on)
= 55V = 440A ≤ 1.8mΩ
TO-247 (IXTH)
Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
Maximum Ratings 55 55 ± 20 ± 30 440 160 1200 200 1.5 1000 -55 ... +175 175 -55 ... +175 W °C °C °C °C °C Nm/lb.in. g g A A J V V V A A V
G
D
S
D (Tab)
TO-268 (IXTT) G S
D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
Features
z z
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268
300 260 1.13 / 10 6 4
International Standard Packages 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Diode z Low R DS(on) Advantages
z
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 250μA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 150°C VGS = 10V, ID = 100A, Notes 1 & 2
Characteristic Values Min. Typ. Max. 55 2.0 4.0 V V
z z
Easy to Mount Space Savings High Power Density
±200 nA 10 750 μA μA Applications
z z z
1.8 mΩ
DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications
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