RU6055L

RU6055L N-Channel Advanced Power MOSFET MOSFET Features 60V/60A, RDS (ON) =10mΩ(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-252 Applications DC-DC Converters and Off-line UPS High Speed Power Switching High Frequency Circuits N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 60 ±25 175 -55 to 175 TC=25°C 60 ① Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS IDP ID Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A Mounted on Large Heat Sink 300μs Pulse Drain Current Tested Continuous Drain Current(VGS=10V) TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 240 A A W W °C/W ② 60 45 97 48 PD RθJC ③ Maximum Power Dissipation Thermal Resistance-Junction to Case 1.55 Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed 121 mJ Copyright© Ruichips Semiconductor Co., Ltd Rev. B– FEB., 2011 www.ruichips.com http://www.Datasheet4U.com RU6055L Electrical Characteristics Symbol Parameter (TA=25°C Unless Otherwise Noted) RU6055L Min. Typ. Max. Test Condition Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) ④ VGS=0V, IDS=250µA VDS= 60V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS= 10V, IDS=30A 60 1 10 2 3 4 ±100 10 12 V µA V nA mΩ Zero Gate Voltage Drain Current Gate Thresho...