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RU190N08Q Dataheets PDF



Part Number RU190N08Q
Manufacturers Ruichips
Logo Ruichips
Description N-Channel Advanced Power MOSFET
Datasheet RU190N08Q DatasheetRU190N08Q Datasheet (PDF)

RU190N08Q N-Channel Advanced Power MOSFET Features Pin Description · 80V/190A RDS (ON)=3.9mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Green Devices Available Applications TO-247 ·Automotive applications and a wide variety of other applications ·High Efficiency Synchronous in SMPS ·High Speed Power Switching Absolute Maximum Ratings Symbol Parameter N-Channel MOSFET Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG Drain-Source Vol.

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RU190N08Q N-Channel Advanced Power MOSFET Features Pin Description · 80V/190A RDS (ON)=3.9mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Green Devices Available Applications TO-247 ·Automotive applications and a wide variety of other applications ·High Efficiency Synchronous in SMPS ·High Speed Power Switching Absolute Maximum Ratings Symbol Parameter N-Channel MOSFET Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current TC=25°C 80 ±25 175 -55 to 175 190 ① V °C °C A IS Mounted on Large Heat Sink IDP ID PD RθJC 300µs Pulsed Drain Current Tested Continue Drain Current Maximum Power Dissipation Thermal Resistance -Junction to Case TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 700 190 ② ① ① A 140 326 W 163 0.46 °C/W mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy ,Single Pulsed 1225 Copyright Ruichips Semiconductor Co., Ltd Rev. D – NOV., 2012 www.ruichips.com http://www.Datasheet4U.com RU190N08Q Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ④ (TA=25°C Unless Otherwise Noted) RU190N08Q Parameter Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 80V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS= 10V, IDS=40A 80 1 30 2 3 4 ±100 3.9 4.8 V µA V nA mΩ Diode Characteristics VSD trr qrr ④ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ⑤ ISD=40A, VGS=0V ISD=40A, dlSD/dt=100A/µs 68 130 1.2 V ns nC Dynamic Characteristics RG Ciss Coss Crss td(ON) tr td(OFF) tf Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ⑤ VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 30V, Frequency=1.0MHz 1.0 6800 1100 490 38 Ω pF VDD=35V, RL=35Ω, IDS= 1A, VGEN= 10V, RG=6Ω 22 ns 120 75 Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=30V, VGS= 10V, IDS=40A 155 45 48 nC ①Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 90A. ②Pulse width limited by safe operating area. ③Limited by TJmax, IAS =50A, VDD = 48V, RG = 47Ω , Starting TJ = 25°C. ④Pulse test ; Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. D – NOV., 2012 2 www.ruichips.com RU190N08Q Typical Characteristics Power Dissipation Drain Current ID - Drain Current (A) Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance VDS - Drain-Source Voltage (V) Normalized Effective Transient Square Wave Pulse Duration (sec) 3 Copyright Ruichips Semiconductor Co., Ltd Rev. D – NOV., 2012 ID - Drain Current (A) Ptot - Power (W) www.ruichips.com RU190N08Q Typical Characteristics Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage RDS(ON) - On - Resistance (mW) VGS - Gate - Source Voltage (V) Normalized Threshold Vlotage Tj - Junction Temperature (°C) Copyright Ruichips Semiconductor Co., Ltd Rev. D – NOV., 2012 4 www.ruichips.com RU190N08Q Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) IS - Source Current (A) VSD - Source-Drain Voltage (V) Capacitance Gate Charge VDS - Drain-Source Voltage (V) VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) Copyright Ruichips Semiconductor Co., Ltd Rev. D – NOV., 2012 5 www.ruichips.com RU190N08Q Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. D – NOV., 2012 6 www.ruichips.com RU190N08Q Ordering and Marking Information Device RU190N08Q Marking RU190N08Q Package TO-247 Packaging Tube Quantity 30 Reel Size Tape width - Copyright Ruichips Semiconductor Co., Ltd Rev. D – NOV., 2012 7 www.ruichips.com RU190N08Q Package Information TO-247 SYMBOL A A1 B b1 b2 c c1 D E1 MM MIN 4.850 2.200 1.000 2.800 1.800 0.500 1.900 15.450 MAX 5.150 2.600 1.400 3.200 2.200 0.700 2.100 15.750 MIN INCH MAX 0.200 0.102 0.055 0.126 0.087 0.028 0.083 0.620 SYMBOL E2 L L1 L2 Φ e H h MIN 0,191 0.087 0.039 0.110 0.071 0.020 0.075 0.608 MM MAX 41.300 25.100 20.600 7.300 3.600 REF 40.900 24.800 20.300 7.100 INCH MIN 1.610 0.976 0.799 0.280 MAX 1.626 0.988 0.811 0.287 0.142 REF 5.450 TYP 5.980 REF. 0.000 0.300 0.215 TYP 0.235 REF. 0.000 0.012 3.500 REF. 0.138 REF. ALL DIMENSIONS REFER TO JEDEC STANDARD D.


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