ECH8501

Ordering number : ENA1581A ECH8501 Bipolar Transistor (–)30V, (–)30A, Low VCE(sat) Complementary Dual ECH8 Features Mounting height 0.9mm Composite type, facilitating high-density mounting Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.075V(typ.)@IC=2.5A PNP : VCE(sat)= --0.1V(typ.)@IC= -2.5A Halogen free compliance http://onsemi.com Specifications ( ): PNP Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg PW≤1μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings (-30)40 (--)30 (-)6 (-)5 (-)30 (-)600 1.3 1.6 150 -55 to +150 Unit V V V A A mA W W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. he Recommended Operating Package Dimensions unit : mm (typ) 7011A-007 Top View 0.25 2.9 0.15 8 5 0 to 0.02 2.8 2.3 Product & Package Information Package : ECH8 JEITA, JEDEC : Minimum Packing Quantity : 3,000 pcs./reel ECH8501-TL-H Packing Type : TL Marking MA TL LOT No. 0.25 1 0.65 4 0.3 Electr...