FDD5N50

FDD5N50 — N-Channel UniFETTM MOSFET November 2013 FDD5N50 Features R DS(on) = N-Channel UniFETTM MOSFET 500 V, 4 A, 1.4 Ω Description UniFETTM MOSFET is F airchild Semiconductor ’s high volt age MOSFET family based on planar stripe and D MOS technology. This MOSFET is tailored to reduce on-st ate resistance, and to provide be tter switching performance and higher avalanche energy strengt h. This device family is suit able for switching power convert er applicatio ns such as power factor corr ection (PFC), flat p anel display (FPD) T V pow er, ATX and electronic lamp ballasts. 1.15 Ω (Typ.) @ VGS = 10 V, ID = 2 A Low Gate Charge (Typ. 11 nC) L ow Crss (Typ. 5 pF) 100% Avalanche Tested R oHS Compliant Applications LCD/LED/PDP TV Lighting Uninterruptible Power Supply D D G G S D-PAK S MOSFET Maximum Ratings Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current TC = 25oC unless otherwise noted. Parameter FDD5N50TM_WS 500 ±30 - Continuous (TC = 25oC) - Pulsed 4 2.4 (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) (TC = 25oC) - Derate Above 25oC0 16 256 4 4 4.5 40 .3 -55 to +150 300 - Continuous (TC = 100oC) Unit V V A A mJ A mJ V/ns W W/oC oC oC Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Thermal C...