D2204

2SD2204 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2204 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 1.5 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1.5 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics S Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC I Pulse I ymbol VCBO VCEO VEBO C CP Rating 65 ± 10 65 ± 10 7 4 6 0.5 2.0 25 Unit V V V A A W °C IB PC Tj 150 Tstg JEDEC JEITA TOSHIBA ― SC-67 2-10R1A −55 to 150 °C Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Base ≈ 5 kΩ ≈ 150 Ω Emitter 1 2006-11-21 http://www.Datasheet4U.com 2SD2204 Electrical Characteristics (Tc = 25°C) Characteristics S ...