Document
PRELIMINARY
TR 907FC-570-14
TR 907FC-570-14
Medium Frequency Thyristor
Properties
Amplifying gate High operational capability Optimized turn-on and turn-off parameters High operating frequency
Applications
Power switching applications
Key Parameters V DRM, V RRM = 1 400 I TAV = 568 I TSM = 11.0 V TO = 2.311 r T = 0.365 t q = 8.0
V A kA V mΩ µs
Types
VRRM, VDRM TR 907FC-570-14 TR 907FC-570-12 TR 907FC-570-10
Conditions:
1 400 V 1 200 V 1 000 V
C, Tj = -40 ÷ 125 ° half sine waveform, f = 50 Hz, note 1
Mechanical Data
Fm m DS Mounting force Weight Surface creepage distance Air strike distance 10 ± 2 kN 0.20 kg 13 mm
Da
8 mm
http://www.Datasheet4U.com
PRELIMINARY
TR 907FC-570-14
Maximum Ratings VRRM VDRM ITRMS ITAVm ITSM I2t (diT/dt)cr Repetitive peak reverse and off-state voltage Tj = -40 ÷ 125 ° C, note 1 RMS on-state current
Tc = 70 ° C, half sine waveform, f = 50 Hz
Maximum Limits TR 907FC-570-14 TR 907FC-570-12 TR 907FC-570-10 1 400 1 200 1 000 892 568
tp = 10 ms tp = 8.3 ms tp = 10 ms tp = 8.3 ms
Unit V
A A A A2s A/µs
Average on-state current
Tc = 70 ° C, half sine waveform, f = 50 Hz
Peak non-repetitive surge
half sine pulse, VR = 0 V
11 000 11 750 605 000 573 000 800
Limiting load integral
half sine pulse, VR = 0 V
Critical rate of rise of on-state current
IT = ITAVm, half sine waveform, f = 50 Hz, VD = 2/3 VDRM, tr = 0.3 µs, IGT = 2 A
(dvD/dt)cr PGAVm IFGM VFGM VRGM Tjmin - Tjmax Tstgmin Tstgmax
Critical rate of rise of off-state voltage
VD = 2/3 VDRM
1 000 3 10 12 10 -40 ÷ 125 -40 ÷ 125
V/µs W A V V ° C ° C
Maximum average gate power losses Peak gate current Peak gate voltage Reverse peak gate voltage Operating temperature range Storage temperature range
Unless otherwise specified Tj = 125 °C Note 1: De-rating factor of 0.13% VRRM or VDRM per ° C is applicable for T j below 25 ° C
PRELIMINARY
TR 907FC-570-14
Characteristics min. VTM VT0 rT IDM IRM tgd Maximum peak on-state voltage
ITM = 1 500 A
Value typ. max. 2.860 2.311 0.365 70 70 2.0
Unit V V mΩ mA mA µs
Threshold voltage Slope resistance
IT1 = 895 A, IT2 = 2 686 A
Peak off-state current
VD = VDRM
Peak reverse current
VR = VRRM
Delay time
Tj = 25 ° C, V D = 0.4 VDRM, ITM = ITAVm, tr = 0.3 µs, IGT = 2 A
tq1
Turn-off time
IT = 500 A, diT/dt = -50 A/µs, VR = 100 V, VD = 2/3 VDRM, dvD/dt = 50 V/µs
group of tq B C D
8.0 10.0 12.5 80 60
µs
Qrr IrrM IH IL VGT
Recovery charge
the same conditions as at tq1
µC A mA mA
Reverse recovery current
the same conditions as at tq1
Holding current Latching current Gate trigger voltage
VD = 12V, IT = 4 A
Tj = 25 ° C Tj = 125 °C Tj = 25 ° C Tj = 125 °C C Tj = - 40 ° Tj = 25 ° C Tj = 125 °C Tj = - 40 ° C Tj = 25 ° C Tj = 125 °C
250 150 1 500 1 000 4 3 2 1000 500 300
V
0.25
IGT
Gate trigger current
VD = 12V, IT = 4 A
mA
10
Unless otherwise specified Tj = 125 °C
PRELIMINARY
TR 907FC-570-14
Thermal Parameters Rthjc Thermal resistance junction to case
double side cooling anode side cooling cathode side cooling
Value 32.0 52.0 83.0 10.0 20.0
Unit K/kW
Rthch
Thermal resistance case to heatsink
double side cooling single side cooling
K/kW
Transient Thermal Impedance Analytical function for transient thermal impedance
i τi ( s ) Ri( K/kW )
35 Transient thermal impedance junction to case Zthjc ( K/kW ) 30 25 20 15 10 5 0 0.001
1 0.4857 13.07
2 0.2162 8.03
3 0.0762 8.20
4 0.0043 2.57
5 0.0006 0.13
Z thjc =
∑
5
R i (1 − exp( −t / τ i ))
i =1
Conditions: Fm = 10 ± 2 kN, Double side cooled
Correction for periodic waveforms
180° sine: add 2.3 K/kW 180° rectangular: add 3.1 K/kW 120° rectangular: add 5.2 K/kW 60° rectangular: add 8.7 K/kW
0.01
0.1
1
10
Square wave pulse duration t d ( s )
Fig. 2 Dependence transient thermal impedance junction to case on square pulse
PRELIMINARY
TR 907FC-570-14
On-State Characteristics
IT ( A )
5000
T j = 25 ° C 12 5 ° C
4000
3000
2000
1000
0 0 1 2 3 4 V ( V5 ) T
Fig. 3 Maximum on-state characteristics
Gate Trigger Characteristics
VG ( V )
DC 5 -40 °C
VG ( V )
6
14
12
V GTmax 50 µs 1 ms I GTmax
10
4
+2 5 °C
8
3
6
2 +125 °C
4
1
V GTmin
10 ms
2 DC
0 0 I GTmin 0.2 0.4 0.6 0.8 1 IG ( A )
0 0 2 4 6 8 10 12 IG ( A )
Fig. 4 Gate trigger characteristics
Fig. 5 Maximum peak gate power loss
PRELIMINARY
TR 907FC-570-14
Surge Characteristics
∫ i 2dt (106 A2s)
ITSM ( kA )
∫ i 2 dt 20 0.8
ITSM ( kA )
25
1
12
10
8
15 0.6
6
10 0.4
VR = 0 V 4
I TSM 5 0.2
V R ≤ 0.5 V DRM 2
0 1 10 t ( ms )
0 100
0 1 10 100 Number n of cycles at 50 Hz
Fig. 6 Surge on-state current vs. pulse length, half sine wave, single pulse, VR = 0 V, Tj = Tjmax
Fig. 7 Surge on-state current vs. number of pulses, half sine wave, Tj = Tjmax
PRELIMINARY
TR 907FC-570-14
Power Loss and Maximum Case Temperature Characteristics
PT ( W )
PT ( W )
ψ = 30° 60° 90° 120°
180° DC
ψ = 30° 60° 90° 120°
180° 270° DC
1500
1500
1000
1000
500
500
0 0 200 400 600 I TAV ( A )
0 0 200 400 600
I TAV ( A )
Fig. 8 On-state power .