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TR907FC-570-14 Dataheets PDF



Part Number TR907FC-570-14
Manufacturers ETC
Logo ETC
Description Medium Frequency Thyristor
Datasheet TR907FC-570-14 DatasheetTR907FC-570-14 Datasheet (PDF)

PRELIMINARY TR 907FC-570-14 TR 907FC-570-14 Medium Frequency Thyristor Properties Amplifying gate High operational capability Optimized turn-on and turn-off parameters High operating frequency Applications Power switching applications Key Parameters V DRM, V RRM = 1 400 I TAV = 568 I TSM = 11.0 V TO = 2.311 r T = 0.365 t q = 8.0 V A kA V mΩ µs Types VRRM, VDRM TR 907FC-570-14 TR 907FC-570-12 TR 907FC-570-10 Conditions: 1 400 V 1 200 V 1 000 V C, Tj = -40 ÷ 125 ° half sine waveform, f = 50.

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PRELIMINARY TR 907FC-570-14 TR 907FC-570-14 Medium Frequency Thyristor Properties Amplifying gate High operational capability Optimized turn-on and turn-off parameters High operating frequency Applications Power switching applications Key Parameters V DRM, V RRM = 1 400 I TAV = 568 I TSM = 11.0 V TO = 2.311 r T = 0.365 t q = 8.0 V A kA V mΩ µs Types VRRM, VDRM TR 907FC-570-14 TR 907FC-570-12 TR 907FC-570-10 Conditions: 1 400 V 1 200 V 1 000 V C, Tj = -40 ÷ 125 ° half sine waveform, f = 50 Hz, note 1 Mechanical Data Fm m DS Mounting force Weight Surface creepage distance Air strike distance 10 ± 2 kN 0.20 kg 13 mm Da 8 mm http://www.Datasheet4U.com PRELIMINARY TR 907FC-570-14 Maximum Ratings VRRM VDRM ITRMS ITAVm ITSM I2t (diT/dt)cr Repetitive peak reverse and off-state voltage Tj = -40 ÷ 125 ° C, note 1 RMS on-state current Tc = 70 ° C, half sine waveform, f = 50 Hz Maximum Limits TR 907FC-570-14 TR 907FC-570-12 TR 907FC-570-10 1 400 1 200 1 000 892 568 tp = 10 ms tp = 8.3 ms tp = 10 ms tp = 8.3 ms Unit V A A A A2s A/µs Average on-state current Tc = 70 ° C, half sine waveform, f = 50 Hz Peak non-repetitive surge half sine pulse, VR = 0 V 11 000 11 750 605 000 573 000 800 Limiting load integral half sine pulse, VR = 0 V Critical rate of rise of on-state current IT = ITAVm, half sine waveform, f = 50 Hz, VD = 2/3 VDRM, tr = 0.3 µs, IGT = 2 A (dvD/dt)cr PGAVm IFGM VFGM VRGM Tjmin - Tjmax Tstgmin Tstgmax Critical rate of rise of off-state voltage VD = 2/3 VDRM 1 000 3 10 12 10 -40 ÷ 125 -40 ÷ 125 V/µs W A V V ° C ° C Maximum average gate power losses Peak gate current Peak gate voltage Reverse peak gate voltage Operating temperature range Storage temperature range Unless otherwise specified Tj = 125 °C Note 1: De-rating factor of 0.13% VRRM or VDRM per ° C is applicable for T j below 25 ° C PRELIMINARY TR 907FC-570-14 Characteristics min. VTM VT0 rT IDM IRM tgd Maximum peak on-state voltage ITM = 1 500 A Value typ. max. 2.860 2.311 0.365 70 70 2.0 Unit V V mΩ mA mA µs Threshold voltage Slope resistance IT1 = 895 A, IT2 = 2 686 A Peak off-state current VD = VDRM Peak reverse current VR = VRRM Delay time Tj = 25 ° C, V D = 0.4 VDRM, ITM = ITAVm, tr = 0.3 µs, IGT = 2 A tq1 Turn-off time IT = 500 A, diT/dt = -50 A/µs, VR = 100 V, VD = 2/3 VDRM, dvD/dt = 50 V/µs group of tq B C D 8.0 10.0 12.5 80 60 µs Qrr IrrM IH IL VGT Recovery charge the same conditions as at tq1 µC A mA mA Reverse recovery current the same conditions as at tq1 Holding current Latching current Gate trigger voltage VD = 12V, IT = 4 A Tj = 25 ° C Tj = 125 °C Tj = 25 ° C Tj = 125 °C C Tj = - 40 ° Tj = 25 ° C Tj = 125 °C Tj = - 40 ° C Tj = 25 ° C Tj = 125 °C 250 150 1 500 1 000 4 3 2 1000 500 300 V 0.25 IGT Gate trigger current VD = 12V, IT = 4 A mA 10 Unless otherwise specified Tj = 125 °C PRELIMINARY TR 907FC-570-14 Thermal Parameters Rthjc Thermal resistance junction to case double side cooling anode side cooling cathode side cooling Value 32.0 52.0 83.0 10.0 20.0 Unit K/kW Rthch Thermal resistance case to heatsink double side cooling single side cooling K/kW Transient Thermal Impedance Analytical function for transient thermal impedance i τi ( s ) Ri( K/kW ) 35 Transient thermal impedance junction to case Zthjc ( K/kW ) 30 25 20 15 10 5 0 0.001 1 0.4857 13.07 2 0.2162 8.03 3 0.0762 8.20 4 0.0043 2.57 5 0.0006 0.13 Z thjc = ∑ 5 R i (1 − exp( −t / τ i )) i =1 Conditions: Fm = 10 ± 2 kN, Double side cooled Correction for periodic waveforms 180° sine: add 2.3 K/kW 180° rectangular: add 3.1 K/kW 120° rectangular: add 5.2 K/kW 60° rectangular: add 8.7 K/kW 0.01 0.1 1 10 Square wave pulse duration t d ( s ) Fig. 2 Dependence transient thermal impedance junction to case on square pulse PRELIMINARY TR 907FC-570-14 On-State Characteristics IT ( A ) 5000 T j = 25 ° C 12 5 ° C 4000 3000 2000 1000 0 0 1 2 3 4 V ( V5 ) T Fig. 3 Maximum on-state characteristics Gate Trigger Characteristics VG ( V ) DC 5 -40 °C VG ( V ) 6 14 12 V GTmax 50 µs 1 ms I GTmax 10 4 +2 5 °C 8 3 6 2 +125 °C 4 1 V GTmin 10 ms 2 DC 0 0 I GTmin 0.2 0.4 0.6 0.8 1 IG ( A ) 0 0 2 4 6 8 10 12 IG ( A ) Fig. 4 Gate trigger characteristics Fig. 5 Maximum peak gate power loss PRELIMINARY TR 907FC-570-14 Surge Characteristics ∫ i 2dt (106 A2s) ITSM ( kA ) ∫ i 2 dt 20 0.8 ITSM ( kA ) 25 1 12 10 8 15 0.6 6 10 0.4 VR = 0 V 4 I TSM 5 0.2 V R ≤ 0.5 V DRM 2 0 1 10 t ( ms ) 0 100 0 1 10 100 Number n of cycles at 50 Hz Fig. 6 Surge on-state current vs. pulse length, half sine wave, single pulse, VR = 0 V, Tj = Tjmax Fig. 7 Surge on-state current vs. number of pulses, half sine wave, Tj = Tjmax PRELIMINARY TR 907FC-570-14 Power Loss and Maximum Case Temperature Characteristics PT ( W ) PT ( W ) ψ = 30° 60° 90° 120° 180° DC ψ = 30° 60° 90° 120° 180° 270° DC 1500 1500 1000 1000 500 500 0 0 200 400 600 I TAV ( A ) 0 0 200 400 600 I TAV ( A ) Fig. 8 On-state power .


2N2609 TR907FC-570-14 5STF07D1413


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