K3798

2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) www.DataSheet4U.com 2SK3798 Unit: mm Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 2.5Ω (ty p.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Sy Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC ( Drain current Note 1) mbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 4 12 40 W 345 4 4.0 150 -55~150 ° mJ A mJ °C C A 1: Gate 2: Drain 3: Source Unit V V V Pulse (t = 1 ms) ( Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA SCTOSHIBA ― 67 2-10U1B Weight : 1.7 g (typ.) Thermal Characteristics Characteristics Sy Thermal resistance, channel to case Thermal resistance, channel to ambient mbol Rth (ch-c) Rth (ch-a) 62. Max 3.125 5 Unit °C/W °C/W 2 Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C, L = 39.6 mH, IAR = 4.0 A, RG = 25 Ω Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 3 1 2005-01-26 http://www.Datasheet4U.com 2SK3798 El...