MA174

Switching Diodes MA4X174 (MA174) Silicon planar type Unit : mm For small power rectification and surge absorption I Features Two isolated elements contained in one package, allowing highdensity mounting High voltage (VR: 200 V) rectification is possible 2.90+0.02 –0.05 1.9±0.2 (0.95) (0.95) 34 1.50+0.25 –0.05 2.8+0.2 –0.3 5° (0.65) 0.16+0.1 –0.06 0.5R 0.60+0.10 –0.05 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Non-repetitive peak forward surge current Output current*1 Repetitive peak forward current*1 Non-repetitive peak forward surge current*1,2 Junction temperature Storage temperature Symbol VR VRRM VRSM IO IFRM IFSM Tj Tstg Rating 200 250 300 100 225 500 125 −55 to +125 Unit V V V mA mA mA °C °C 4 3 1 2 10° +0.2 0 to 0.1 1.1–0.1 Marking Symbol: M20 Internal Connection Note) *1 : Value in single diode used *2 : t = 1 s I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF VR = 200 V IF = 100 mA Conditions Min Typ Max 1.0 1.3 Unit µA V Note) 1. Rated input/output frequency: 3 MHz Note) The part number in the parenthesis shows conventional part number. 176 1.1+0.3 –0.1 1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 Mini4-G1 Package 0.4±0.2 I Absolute Maximum Ratings Ta = 25°C 21 (0.2) http://www.Datasheet4U.com Switching Diodes IF  V F 1 000 100 MA4X174 IR  V R Ta = 125°C 1.6 1.4 VF  Ta 100 10 Forward current IF (mA) Forward voltage VF (V) Reverse current IR (nA) 1....