2SC5124
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=...
2SC5124
Silicon
NPN Triple Diffused Planar
Transistor (High Voltage Switchihg
Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5124 1500 800 6 10(Pulse20) 5 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Display Horizontal Deflection Output, Switching
Regulator and General Purpose
(Ta=25°C) 2SC5124 100max 1max 100max 800min 8min 4t o9 5max 1.5max 3typ 130typ Unit µA mA µA V
sElectrical Characteristics
Symbol ICBO1 ICBO2 IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT COB Conditions VCB=1200V VCB=1500V VEB=6V IC=10mA VCE=5V, IC=1A VCE=5V, IC=8A IC=8A, IB=2A IC=8A, IB=2A VCE=12V, IE=–1A VCB=10V, f=1MHz
External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6
23.0±0.3
9.5±0.2
a b
V V MHz pF
19.1 16.2
1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 4.4 1.5 0.65 +0.2 -0.1
3.3
0.8
3.35
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL (Ω) 33.3 IC (A) 6 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 1.2 IB2 (A) –2.4 ton (µs) 0.1typ tstg (µs) 4.0typ tf (µs) 0.2typ
1.5
B
C
E
Weight : Approx 6.5g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
2.4 A
VCE(sat)–IC Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C / I B =5:1
I C – V BE Temperature Characteristics (Typical)
10 (V CE =5V)
10
1. 8A
8
8
C (A)
1. 2A
C (A)
2 Collector Current I 6
6 Collector Current I
700 mA
4
300 mA
4
1
2
I B =100mA
2
0
0
13
2
CE (V)
4
0 0.0...
