N-Channel MOSFET. FDPF20N50 Datasheet

FDPF20N50 Datasheet PDF, Equivalent


Part Number

FDPF20N50

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 10 Pages
PDF Download
Download FDPF20N50 Datasheet PDF


FDPF20N50 Datasheet
FDP20N50 / FDPF20N50 / FDPF20N50T
N-Channel UniFETTM MOSFET
500 V, 20 A, 230 mΩ
November 2013
Features
• RDS(on) = 200 mΩ (Typ.) @ VGS = 10 V, ID = 10 A
• Low Gate Charge (Typ. 45.6 nC)
• Low Crss (Typ. 27 pF)
• 100% Avalanche Tested
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFETTM MOSFET is F airchild Semiconductor ’s high volt age
MOSFET family based on planar stripe and D MOS technology.
This MOSFET is tailored to reduce on-st ate resistance, and to
provide be tter switching performance and higher avalanche
energy strengt h. This device family is suit able for switching
power convert er applicatio ns such as power factor corr ection
(PFC), flat p anel display (FPD) T V pow er, ATX and electronic
lamp ballasts.
D
GDS
TO-220
GDS
TO-220F
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
S
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP20N50
20
12.9
80
500
±30
1110
20
25
4.5
FDPF20N50 /
FDPF20N50T
20 *
12.9 *
80 *A
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
250 38.5
2.0 0.3
-55 to +150
300
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FDP20N50
0.5
62.5
FDPF20N50/
FDPF20N50T
3.3
62.5
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
©2006 Fairchild Semiconductor Corporation
FDP20N50 / FDPF20N50 / FDPF20N50T Rev. C1
1
www.fairchildsemi.com
http://www.Datasheet4U.com

FDPF20N50 Datasheet
Package Marking and Ordering Information
Part Number
FDP20N50
FDPF20N50
FDPF20N50T
Top Mark
FDP20N50
FDPF20N50
FDPF20N50
Package
TO-220
TO-220F
TO-220F
Packing Method
Tube
Tube
Tube
Reel Size
N/A
N/A
N/A
Tape Width
N/A
N/A
N/A
Quantity
50 units
50 units
50 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 μA
ID = 250 μA, Referenced to 25°C-
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 μA3
VGS = 10 V, ID = 10 A
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40 V, ID = 10 A
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 250 V, ID = 20 A,
VGS = 10 V, RG = 25 Ω
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = 400 V, ID = 20 A,
VGS = 10 V
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4)
(Note 4)
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 20 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 20 A,
dIF/dt =100 A/μs
Min.
500
-
--
--
--
--
.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
0.5
--
--
--
--
--
0.20
24.6
2400
355
27
95
375
100
105
45.6
14.8
21.6
--
--
--
507
7.20
Max. Unit
--
--
1
10
100
-100
V
V/°C
μA
μA
nA
nA
5.0
0.23
--
V
Ω
S
3120
465
--
pF
pF
pF
200 ns
760 ns
210 ns
220 ns
59.5 nC
-- nC
-- nC
20 A
80 A
1.4 V
-- ns
-- μC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 5.0 mH, IAS = 20 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 20 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
©2006 Fairchild Semiconductor Corporation
FDP20N50 / FDPF20N50 / FDPF20N50T Rev. C1
2
www.fairchildsemi.com


Features Datasheet pdf FDP20N50 / FDPF20N50 / FDPF20N50T — N- Channel UniFETTM MOSFET November 2013 FDP20N50 / FDPF20N50 / FDPF20N50T N-Ch annel UniFETTM MOSFET 500 V, 20 A, 230 mΩ Features • RDS(on) = 200 mΩ (Typ .) @ VGS = 10 V, ID = 10 A • Low Gate Charge (Typ. 45.6 nC) • Low Crss (Ty p. 27 pF) • 100% Avalanche Tested De scription UniFETTM MOSFET is F airchild Semiconductor ’s high volt age MOSFE T family based on planar stripe and D M OS technology. This MOSFET is tailored to reduce on-st ate resistance, and to provide be tter switching performance a nd higher avalanche energy strengt h. T his device family is suit able for swit ching power convert er applicatio ns su ch as power factor corr ection (PFC), f lat p anel display (FPD) T V pow er, AT X and electronic lamp ballasts. Applic ations • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply • AC -DC Power Supply D G D S TO-220 G D S G TO-220F S Absolute Maximum Rati ngs Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Dra.
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