2SK3079
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3079
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
Unit: mm l Output Power l Gain : l Drain Efficiency : PO = 33.0dBmW (Min) GP = 7.0dB (Min) : ηD = 40% (Min)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC S Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Channel Tempera...
