CGHV27030S

CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devicesare ideal for telecommunications applications with frequencies of 700-960 MHz, 1200-1400 MHz, 1800-2200 MHz, 2500-2700 MHz, and 3300-3700 MHz at both 50 V CGHV27030S is also ideal for tactical communications and 28 V operations. applications operating The from 20-25P0a0ckaPgNe :TyCpGeH:V32x740D30FSN MHz, including land mobile radios. Additional applications include L-Band RADAR and S-Band RADAR. The CGHV27030S can operate with either a 50 V or 28 V rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Rev 0.2 – April 2014 Typical Performance 2.5-2.7 GHz (TC = 25˚C) , 50 V Parameter 2.5 GHz 2.6 GHz Small Signal Gain 23.0 22.0 2.7 GHz 21.4 Units dB Adjacent Channel Power @ POUT =5 W -34.5 -36.5 -37.0 dBc Drain Efficiency @ POUT = 5 W 29.5 31.5 32.9 % Input Return Loss 13.4 9.5 10.4 dB Note: Measured in the CGHV27030S-TB1 application circuit, under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH. Features for 50 V in CGHV27030S-TB1 2.5 - 2.7 GHz Operation 30 W Typical Output Power 21 dB Gain at 5 W PAVE -36 dBc ACLR at 5 W PAVE 32% efficiency at 5 W PAVE High degree of APD and DPD correction can be applied Listing of Avai...