CY14B116S

PRELIMINARY CY14B116L/CY14B116N/CY14B116S CY14E116L/CY14E116N/CY14E116S 16-Mbit (2048 K × 8/1024 K × 16/512 K × 32) nvSRAM Features 16-Mbit nonvolatile static random access memory (nvSRAM) ❐ 25-ns, 30-ns and 45-ns access times ❐ Internally organized as 2048 K × 8 (CY14X116L), 1024 K × 16 (CY14X116N), 512 K × 32 (CY14X116S) ❐ Hands-off automatic STORE on power-down with only a small capacitor ❐ STORE to QuantumTrap nonvolatile elements is initiated by software, device pin, or AutoStore on power-down ❐ RECALL to SRAM initiated by software or power-up ■ High reliability ❐ Infinite read, write, and RECALL cycles ❐ 1 million STORE cycles to QuantumTrap ❐ Data retention: 20 years ■ Sleep mode operation ■ Low power consumption ❐ Active current of 75 mA at 45 ns ❐ Standby mode current of 650 A ❐ Sleep mode current of 10 A ■ ■ ■ Offered speeds ❐ 44-pin TSOP II: 25 ns and 45 ns ❐ 48-pin TSOP I: 30 ns and 45 ns ❐ 54-pin TSOP II: 25 ns and 45 ns ❐ 165-ball FBGA: 25 ns and 45 ns Functional Description The C ypress CY14X1 16L/CY14X116N/CY14X116S i s a fast SRAM, with a no nvolatile el ement in each memory cel l. T he memory is organized as 2048 K bytes of 8 bits each or 1024 K words of 16 bits each o r 512 K words of 32 bit s each . T he embedded non volatile elemen ts inco rporate Qu antumTrap technology, prod ucing the world’s mo st reli able nonvolatile memory. The SRAM can be read and written an infinite number of times. The nonvolatile d ata residin g in the nonvolatile elements...