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2N5190G, 2N5191G, 2N5192G Silicon NPN Power Transistors
Silicon NPN power transistors are for use in power amplifier and switching circuits, − excellent safe area limits. Complement to PNP 2N5194, 2N5195.
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• Epoxy Meets UL 94 V−0 @ 0.125 in. • These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Collector−Emitter Voltage 2N5190G 2N5191G 2N5192G Collector−Base Voltage 2N5190G 2N5191G 2N5192G Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range ESD − Human Body Model ESD − Machine Model Symbol VCEO 40 60 80 VCBO 40 60 80 VEBO IC IB PD 40 320 TJ, Tstg HBM MM –65 to +150 3B C W mW/°C °C V V 5.0 4.0 1.0 Vdc Adc Adc Vdc Value Unit Vdc
4.0 AMPERES NPN SILICON POWER TRANSISTORS 40, 60, 80 VOLTS − 40 WATTS
COLLECTOR 2
3 BASE 1 EMITTER
TO−225 CASE 77 STYLE 1 1 2 3
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
YWW 2 N519xG
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction−to−Case Symbol RqJC Max 3.12 Unit °C/W
Y = Y ear WW = W ork Week 2N519x = Device Code x = 0, 1, or 2 G = Pb−Free Package
ORDERING INFORMATION
Device 2N5190G 2N5191G 2N5192G Package TO−225 (Pb−Free) TO−225 (Pb−Free) TO−225 (Pb−Free) Shipping 500 Units/Box 500 Units/Box 500 Units/Box
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
1
October, 2013 − Rev. 14
Publication Order Number: 2N5191/D
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2N5190G, 2N5191G, 2N5192G
ELECTRICAL CHARACTERISTICS* (TC = 25_C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 0.1 Adc, IB = 0) 2N5190G 2N5191G 2N5192G Collector Cutoff Current (VCE = 40 Vdc, IB = 0) 2N5190G (VCE = 60 Vdc, IB = 0) 2N5191G (VCE = 80 Vdc, IB = 0) 2N5192G Collector Cutoff Current (VCE = 40 Vdc, VEB(off) = 1.5 Vdc) 2N5190G (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) 2N5191G (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) 2N5192G (VCE = 40 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) 2N5190G (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) 2N5191G (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) 2N5192G Collector Cutoff Current (VCB = 40 Vdc, IE = 0) 2N5190G (VCB = 60 Vdc, IE = 0) 2N5191G (VCB = 80 Vdc, IE = 0) 2N5192G Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.5 Adc, VCE = 2.0 Vdc) 2N5190G/2N5191G 2N5192G (IC = 4.0 Adc, VCE = 2.0 Vdc) 2N5190G/2N5191G 2N5192G Collector−Emitter Saturation Voltage (IC = 1.5 Adc, IB = 0.15 Adc) (IC = 4.0 Adc, IB = 1.0 Adc) Base−Emitter On Voltage (IC = 1.5 Adc, VCE = 2.0 Vdc) DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) *JEDEC Registered Data. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. fT 2.0 − MHz hFE 25 20 10 7.0 VCE(sat) − − VBE(on) − 1.2 0.6 1.4 Vdc 100 80 − − Vdc − VCEO(sus) 40 60 80 ICEO − − − ICEX − − − − − − ICBO − − − IEBO − 1.0 0.1 0.1 0.1 mAdc 0.1 0.1 0.1 2.0 2.0 2.0 mAdc 1.0 1.0 1.0 mAdc − − − mAdc Vdc Symbol Min Max Unit
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2N5190G, 2N5191G, 2N5192G
hFE, DC CURRENT GAIN (NORMALIZED)
10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.004
TJ = 150°C
VCE = 2.0 V VCE = 10 V
25°C
- 55°C
0.007
0.01
0.02
0.03
0.05
0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP)
0.5
1.0
2.0
3.0
4.0
Figure 1. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 TJ = 25°C 1.6
1.2
IC = 10 mA
100 mA
1.0 A
3.0 A
0.8
0.4
0 0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
5.0 7.0 10 3.0 IB, BASE CURRENT (mA)
20
30
50
70
100
200
300
500
Figure 2. Collector Saturation Region
θV, TEMPERATURE COEFFICIENTS (mV/°C)
2.0 TJ = 25°C 1.6
+ 2.5 + 2.0 + 1.5 + 1.0 + 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 qV for VBE *qV for VCE(sat) *APPLIES FOR IC/IB ≤ hFE @ VCE + 2.0 V 2 TJ = - 65°C to +150°C
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.4 VCE(sat) @ IC/IB = 10 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 3. “On” Voltages
Figure 4. Temperature Coefficients
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2N5190G, 2N5191G, 2N5192G
103 VCE = 30 V 102 101 100 10-1 10- 2 TJ = 150°C
RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
107 IC = 10 x ICES 106 105 IC ≈ ICES IC = 2 x ICES 104 VCE = 30 V
100°C REVERSE FORWARD
25°C ICES 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6
103
(TYPICAL ICES VALUES OBTAINED FROM FIGURE 5) 40 60 80 100 120 140 160
10- 3 - 0.4 - 0.3 - 0.2 - 0.1
102 20
VBE, BASE-EMITTER VOLTAGE (VOLTS)
TJ,.