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2N5190G Dataheets PDF



Part Number 2N5190G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Silicon NPN Power Transistors
Datasheet 2N5190G Datasheet2N5190G Datasheet (PDF)

2N5190G, 2N5191G, 2N5192G Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, − excellent safe area limits. Complement to PNP 2N5194, 2N5195. Features http://onsemi.com • Epoxy Meets UL 94 V−0 @ 0.125 in. • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector−Emitter Voltage 2N5190G 2N5191G 2N5192G Collector−Base Voltage 2N5190G 2N5191G 2N5192G Emitter−Base Voltage Collector Current Base Current Total D.

  2N5190G   2N5190G



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2N5190G, 2N5191G, 2N5192G Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, − excellent safe area limits. Complement to PNP 2N5194, 2N5195. Features http://onsemi.com • Epoxy Meets UL 94 V−0 @ 0.125 in. • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector−Emitter Voltage 2N5190G 2N5191G 2N5192G Collector−Base Voltage 2N5190G 2N5191G 2N5192G Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range ESD − Human Body Model ESD − Machine Model Symbol VCEO 40 60 80 VCBO 40 60 80 VEBO IC IB PD 40 320 TJ, Tstg HBM MM –65 to +150 3B C W mW/°C °C V V 5.0 4.0 1.0 Vdc Adc Adc Vdc Value Unit Vdc 4.0 AMPERES NPN SILICON POWER TRANSISTORS 40, 60, 80 VOLTS − 40 WATTS COLLECTOR 2 3 BASE 1 EMITTER TO−225 CASE 77 STYLE 1 1 2 3 MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. YWW 2 N519xG THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol RqJC Max 3.12 Unit °C/W Y = Y ear WW = W ork Week 2N519x = Device Code x = 0, 1, or 2 G = Pb−Free Package ORDERING INFORMATION Device 2N5190G 2N5191G 2N5192G Package TO−225 (Pb−Free) TO−225 (Pb−Free) TO−225 (Pb−Free) Shipping 500 Units/Box 500 Units/Box 500 Units/Box *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 1 October, 2013 − Rev. 14 Publication Order Number: 2N5191/D http://www.Datasheet4U.com 2N5190G, 2N5191G, 2N5192G ELECTRICAL CHARACTERISTICS* (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 0.1 Adc, IB = 0) 2N5190G 2N5191G 2N5192G Collector Cutoff Current (VCE = 40 Vdc, IB = 0) 2N5190G (VCE = 60 Vdc, IB = 0) 2N5191G (VCE = 80 Vdc, IB = 0) 2N5192G Collector Cutoff Current (VCE = 40 Vdc, VEB(off) = 1.5 Vdc) 2N5190G (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) 2N5191G (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) 2N5192G (VCE = 40 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) 2N5190G (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) 2N5191G (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) 2N5192G Collector Cutoff Current (VCB = 40 Vdc, IE = 0) 2N5190G (VCB = 60 Vdc, IE = 0) 2N5191G (VCB = 80 Vdc, IE = 0) 2N5192G Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.5 Adc, VCE = 2.0 Vdc) 2N5190G/2N5191G 2N5192G (IC = 4.0 Adc, VCE = 2.0 Vdc) 2N5190G/2N5191G 2N5192G Collector−Emitter Saturation Voltage (IC = 1.5 Adc, IB = 0.15 Adc) (IC = 4.0 Adc, IB = 1.0 Adc) Base−Emitter On Voltage (IC = 1.5 Adc, VCE = 2.0 Vdc) DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) *JEDEC Registered Data. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. fT 2.0 − MHz hFE 25 20 10 7.0 VCE(sat) − − VBE(on) − 1.2 0.6 1.4 Vdc 100 80 − − Vdc − VCEO(sus) 40 60 80 ICEO − − − ICEX − − − − − − ICBO − − − IEBO − 1.0 0.1 0.1 0.1 mAdc 0.1 0.1 0.1 2.0 2.0 2.0 mAdc 1.0 1.0 1.0 mAdc − − − mAdc Vdc Symbol Min Max Unit http://onsemi.com 2 2N5190G, 2N5191G, 2N5192G hFE, DC CURRENT GAIN (NORMALIZED) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.004 TJ = 150°C VCE = 2.0 V VCE = 10 V 25°C - 55°C 0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 1.0 2.0 3.0 4.0 Figure 1. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 TJ = 25°C 1.6 1.2 IC = 10 mA 100 mA 1.0 A 3.0 A 0.8 0.4 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 5.0 7.0 10 3.0 IB, BASE CURRENT (mA) 20 30 50 70 100 200 300 500 Figure 2. Collector Saturation Region θV, TEMPERATURE COEFFICIENTS (mV/°C) 2.0 TJ = 25°C 1.6 + 2.5 + 2.0 + 1.5 + 1.0 + 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 qV for VBE *qV for VCE(sat) *APPLIES FOR IC/IB ≤ hFE @ VCE  +  2.0 V 2 TJ = - 65°C to +150°C 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 3. “On” Voltages Figure 4. Temperature Coefficients http://onsemi.com 3 2N5190G, 2N5191G, 2N5192G 103 VCE = 30 V 102 101 100 10-1 10- 2 TJ = 150°C RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 107 IC = 10 x ICES 106 105 IC ≈ ICES IC = 2 x ICES 104 VCE = 30 V 100°C REVERSE FORWARD 25°C ICES 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 103 (TYPICAL ICES VALUES OBTAINED FROM FIGURE 5) 40 60 80 100 120 140 160 10- 3 - 0.4 - 0.3 - 0.2 - 0.1 102 20 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ,.


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