2SB183060MA

2SB183060MA 2SB183060MA SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø Ø Ø Ø Ø Ø 2SB183060MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Low power losses, high efficiency; High ESD capability; High surge capability; Guard ring construction for transient protection; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits. Chip Topography ORDERING SPECIFICATIONS Product Name 2SB183060MAYY Specification Top metal is Ag, for solder process; Back metal is Ag, for solder process. CHIP INFORMATION Item Wafer Size Gross Die Die Size(La) Top Pad Size(Lb) Wafer Thickness(Lc) Top Metal / Thickness Back Metal / Thickness Passivation Scribe Line Width Characterization 5Inch 3,232dice/wafer 1830µm 1690µm 280±20µm Ag:5µm Ag:1.2µm SiO2 50µm HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:2.0 2010.03.18 Page 1 of 2 http://www.Datasheet4U.com 2SB183060MA ABSOLUTE MAXIMUM RATINGS（at DO-201AD package ） Parameters Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge [email protected] Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 60 5 125 150 -40~150 Unit V A A °C °C ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameters Reverse Voltage Forward Voltage Reverse Current Symbol VBR VF IR IF=5A VR=60V Test Conditions IR=100µA Min. 60 --Max. -0.65 100 Unit V V µA Disclaimer : Silan ...