CAT22C10

CAT22C10 256-Bit Nonvolatile CMOS Static RAM FEATURES s Single 5V Supply s Fast RAM Access Times: s Low CMOS Power Consumption: –200ns –300ns s Infinite EEPROM to RAM Recall s CMOS and TTL Compatible I/O s Power Up/Down Protection s 100,000 Program/Erase Cycles (E2PROM) –Active: 40mA Max. –Standby: 30µA Max. s JEDEC Standard Pinouts: –18-lead DIP –16-lead SOIC s 10 Year Data Retention s Commercial, Industrial and Automotive Temperature Ranges DESCRIPTION The CAT22C10 NVRAM is a 256-bit nonvolatile memory organized as 64 words x 4 bits. The high speed Static RAM array is bit for bit backed up by a nonvolatile EEPROM array which allows for easy transfer of data from RAM array to EEPROM (STORE) and from EEPROM to RAM (RECALL). STORE operations are completed in 10ms max. and RECALL operations typically within 1.5 µs. The CAT22C10 features unlimited RAM write operations either through external RAM writes or internal recalls from EEPROM. Internal false store protection circuitry prohibits STORE operations when VCC is less than 3.0V. The CAT22C10 is manufactured using Catalyst’s advanced CMOS floating gate technology. It is designed to endure 100,000 program/erase cycles (EEPROM) and has a data retention of 10 years. The device is available in JEDEC approved 18-lead plastic DIP and 16-lead SOIC packages. PIN CONFIGURATION DIP Package (L) SOIC Package (W) A4 A3 A2 A1 A0 CS Vss STORE PIN FUNCTIONS Pin Name A0–A5 Function Address Data In/Out Write Enable Chip Select Recall Stor...