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RFPA2013 Dataheets PDF



Part Number RFPA2013
Manufacturers RF Micro Devices
Logo RF Micro Devices
Description GaAs HBT Power Amplifier
Datasheet RFPA2013 DatasheetRFPA2013 Datasheet (PDF)

RFPA2013Preliminary RFPA2013 GaAs HBT Power Amplifier 0.5W, 400MHz to 2700MHz Package: QFN, 16-Pin, 3mm x 3mm VREF NC 16 15 BIAS CIRCUIT NC 14 Features „ -60dBc ACPR at 15.5dBm WCDMA 0.5W Output Power (P1dB) NF = 3.8dB at 2140MHz Gain = 15.7dB at 2140MHz Power-Down Capability NC RFIN RFIN NC 1 2 3 4 5 NC VBIAS 13 12 NC 11 RFOUT/VCC 10 RFOUT/VCC 9 NC 8 NC „ „ „ „ AMP Applications „ „ PA Stage for Commercial Wireless Infrastructure 2nd or 3rd Stage LNAs Class AB Operation for GSM, .

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RFPA2013Preliminary RFPA2013 GaAs HBT Power Amplifier 0.5W, 400MHz to 2700MHz Package: QFN, 16-Pin, 3mm x 3mm VREF NC 16 15 BIAS CIRCUIT NC 14 Features „ -60dBc ACPR at 15.5dBm WCDMA 0.5W Output Power (P1dB) NF = 3.8dB at 2140MHz Gain = 15.7dB at 2140MHz Power-Down Capability NC RFIN RFIN NC 1 2 3 4 5 NC VBIAS 13 12 NC 11 RFOUT/VCC 10 RFOUT/VCC 9 NC 8 NC „ „ „ „ AMP Applications „ „ PA Stage for Commercial Wireless Infrastructure 2nd or 3rd Stage LNAs Class AB Operation for GSM, DCS, PCS, UMTS, WiMAX, TDSCDMA, LTE Transceiver Applications Functional Block Diagram „ „ Product Description The RFPA2013 is a single-stage GaAs HBT power amplifier specifically designed for Wireless Infrastructure applications. It offers ultra-linear operation at a comparably low DC power, making it ideal for next generation radios requiring high efficiency. Its external matching allows for use across various radio platforms within 400MHz to 2700MHz. The RFPA2013 offers a low noise figure, making it an excellent solution for 2nd and 3rd stage LNAs. Ordering Information RFPA2013SR RFPA2013SQ RFPA2013TR7 RFPA2013PCK-410 RFPA2013PCK-411 RFPA2013PCK-412 869MHz to 894MHz 7” Sample reel with 100 pieces Sample bag with 25 pieces 7” Reel with 2500 pieces 2110MHz to 2170MHz PCBA with 5-piece sample bag 2600MHz to 2700MHz PCBA with 5-piece sample bag 2550MHz to 2650MHz PCBA with 5-piece sample bag PCBA Not Available Online, Contact Product Line Apps RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc. DS130219 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. NC NC GaAs Pre-Driver for Base Station Amplifiers 6 7 http://www.Datasheet4U.com 1 of 20 RFPA2013 Absolute Maximum Ratings Parameter Supply Voltage (VCC, VBIAS) DC Supply Current (ICC) CW Input Power, 2:1 Output VSWR Output Load VSWR at P3dB Operating Junction Temperature Operating Temperature Range (TL) Storage Temperature ESD Rating – Human Body Model (HBM) Moisture Sensitivity Level Rating 6.0 380 20 5:1 160 -40 to +85 -40 to +150 Class 1C MSL-1 Unit V mA dBm °C °C °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Notes: 1. The maximum ratings must all be met simultaneously. 2. PDISS = PDC + PRFIN - PRFOUT 3. TJ = TL + PDISS * RTH Parameter 869MHz to 894MHz Frequency Input Power (PIN) Gain (S21) OIP3 P1dB Input Return Loss (S11) Output Return Loss (S22) Noise Figure WCDMA Channel Power at -55dBc ACPR Min. Specification Typ. 880 Max. Unit Condition VCC = 5.0V, ICQ = 165mA, linear tune MHz 10 dBm dB dBm dBm dB dB dB dBm EVB tuned for WCDMA 60dBc linear operation Max recommended continuous input power, VCC < 6.0V, load VSWR < 2:1 15dBm/tone, tone spacing = 1MHz EVB tuned for linear operation 21.8 41 27.5 14 8 3.8 16.5 3GPP 3.5, test model 1, 64 DPCH VCC = 5.0V, ICQ = 165mA, linear tune 2110MHz to 2170MHz Frequency Input Power (PIN) Gain (S21) OIP3 P1dB Input Return Loss (S11) Output Return Loss (S22) Noise Figure WCDMA Channel Power at -55dBc ACPR 15.7 41.5 27 14 10.5 3.8 16.5 2140 16 MHz dBm dB dBm dBm dB dB dB dBm EVB tuned for WCDMA 60dBc linear operation Max recommended continuous input power, VCC < 6.0V, load VSWR < 2:1 15dBm/tone, tone spacing = 1MHz EVB tuned for linear operation 3GPP 3.5, test model 1, 64 DPCH 2 of 20 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS130219 RFPA2013 Parameter 2550MHz to 2650MHz Frequency Input Power (PIN) Gain (S21) OIP3 P1dB Input Return Loss (S11) Output Return Loss (S22) Noise Figure WCDMA Channel Power at -55dBc ACPR 14.1 41 26.8 12.5 12 3.4 16.0 2600 17 MHz dBm dB dBm dBm dB dB dB dBm 3GPP 3.5, test model 1, 64 DPCH VCC = 5.0V, ICQ = 165mA, linear tune 265.


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