RFPA2013Preliminary
RFPA2013
GaAs HBT Power Amplifier 0.5W, 400MHz to 2700MHz
Package: QFN, 16-Pin, 3mm x 3mm
VREF
NC
16
15
BIAS CIRCUIT
NC 14
Features
-60dBc ACPR at 15.5dBm WCDMA 0.5W Output Power (P1dB) NF = 3.8dB at 2140MHz Gain = 15.7dB at 2140MHz Power-Down Capability
NC RFIN RFIN NC
1 2 3 4 5 NC
VBIAS 13 12 NC 11 RFOUT/VCC 10 RFOUT/VCC 9 NC 8 NC
AMP
Applications
PA Stage for Commercial Wireless Infrastructure 2nd or 3rd Stage LNAs Class AB Operation for GSM, DCS, PCS, UMTS, WiMAX, TDSCDMA, LTE Transceiver Applications
Functional Block Diagram
Product Description
The RFPA2013 is a single-stage GaAs HBT power amplifier specifically designed for Wireless Infrastructure applications. It offers ultra-linear operation at a comparably low DC power, making it ideal for next generation radios requiring high efficiency. Its external matching allows for use across various radio platforms within 400MHz to 2700MHz. The RFPA2013 offers a low noise figure, making it an excellent solution for 2nd and 3rd stage LNAs.
Ordering Information
RFPA2013SR RFPA2013SQ RFPA2013TR7 RFPA2013PCK-410 RFPA2013PCK-411 RFPA2013PCK-412 869MHz to 894MHz 7” Sample reel with 100 pieces Sample bag with 25 pieces 7” Reel with 2500 pieces 2110MHz to 2170MHz PCBA with 5-piece sample bag 2600MHz to 2700MHz PCBA with 5-piece sample bag 2550MHz to 2650MHz PCBA with 5-piece sample bag PCBA Not Available Online, Contact Product Line Apps
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
DS130219
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or
[email protected].
NC
NC
GaAs Pre-Driver for Base Station Amplifiers
6
7
http://www.Datasheet4U.com
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RFPA2013
Absolute Maximum Ratings Parameter
Supply Voltage (VCC, VBIAS) DC Supply Current (ICC) CW Input Power, 2:1 Output VSWR Output Load VSWR at P3dB Operating Junction Temperature Operating Temperature Range (TL) Storage Temperature ESD Rating – Human Body Model (HBM) Moisture Sensitivity Level
Rating
6.0 380 20 5:1 160 -40 to +85 -40 to +150 Class 1C MSL-1
Unit
V mA dBm °C °C °C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
Notes: 1. The maximum ratings must all be met simultaneously. 2. PDISS = PDC + PRFIN - PRFOUT 3. TJ = TL + PDISS * RTH
Parameter
869MHz to 894MHz
Frequency Input Power (PIN) Gain (S21) OIP3 P1dB Input Return Loss (S11) Output Return Loss (S22) Noise Figure WCDMA Channel Power at -55dBc ACPR
Min.
Specification Typ.
880
Max.
Unit
Condition
VCC = 5.0V, ICQ = 165mA, linear tune
MHz 10 dBm dB dBm dBm dB dB dB dBm
EVB tuned for WCDMA 60dBc linear operation Max recommended continuous input power, VCC < 6.0V, load VSWR < 2:1 15dBm/tone, tone spacing = 1MHz EVB tuned for linear operation
21.8 41 27.5 14 8 3.8 16.5
3GPP 3.5, test model 1, 64 DPCH VCC = 5.0V, ICQ = 165mA, linear tune
2110MHz to 2170MHz
Frequency Input Power (PIN) Gain (S21) OIP3 P1dB Input Return Loss (S11) Output Return Loss (S22) Noise Figure WCDMA Channel Power at -55dBc ACPR 15.7 41.5 27 14 10.5 3.8 16.5 2140 16 MHz dBm dB dBm dBm dB dB dB dBm
EVB tuned for WCDMA 60dBc linear operation Max recommended continuous input power, VCC < 6.0V, load VSWR < 2:1 15dBm/tone, tone spacing = 1MHz EVB tuned for linear operation
3GPP 3.5, test model 1, 64 DPCH
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or
[email protected].
DS130219
RFPA2013
Parameter
2550MHz to 2650MHz
Frequency Input Power (PIN) Gain (S21) OIP3 P1dB Input Return Loss (S11) Output Return Loss (S22) Noise Figure WCDMA Channel Power at -55dBc ACPR 14.1 41 26.8 12.5 12 3.4 16.0 2600 17 MHz dBm dB dBm dBm dB dB dB dBm 3GPP 3.5, test model 1, 64 DPCH VCC = 5.0V, ICQ = 165mA, linear tune 265.