V-Chip Memory Back-Up Capacitors
V-Chip Memory Back-Up Capacitors
FEATURES • DOUBLE LAYER CONSTRUCTION • POWER BACK-UP FOR CMOS DEVICES • SURFACE MOUNTAB...
Description
V-Chip Memory Back-Up Capacitors
FEATURES DOUBLE LAYER CONSTRUCTION POWER BACK-UP FOR CMOS DEVICES SURFACE MOUNTABLE V-CHIP STYLE LEAD-FREE FINISH CHARACTERISTICS
Rated Voltage Range Rated Capacitance Range Operating Temp. Range Capacitance Tolerance Load Life Test +70°C 1,000 hours Temperature Cycling (5 cycles, -25 ~ +70°C 3.5 & 5.5VDC 0.047F ~ 1.0F (47,000μF ~ 1,000,000μF) -25°C ~ +70°C +80%/-20% (Z) Δ Capacitance Change Maximum ESR Current at 30 minutes Δ Capacitance Change Maximum ESR Current at 30 minutes Δ Capacitance Change Maximum ESR Current at 30 minutes *For high temperature +85°C, high temperature reflow parts see the NEXCW series
NEXC Series
Humidity Resistance (240 hours @ 40°C/90% RH)
Less than ±30% of initial measured value Less than 200% of the specified maximum value Less than 200% of the specified maximum value Within +80%/-20% of specified value Less than specified maximum value Less than specified maximum value Less than ±20% of initial measured value Less than 120% of the specified maximum value Less than 120% of the specified maximum value
STANDARD VALUES AND SPECIFICATIONS
NIC P/N NEXC104Z3.5V10.5X5.5TRF NEXC224Z3.5V10.5X5.5TRF NEXC474Z3.5V10.5X8.5TRF NEXC473Z5.5V10.5X5.5TRF NEXC104Z5.5V10.5X5.5TRF NEXC224Z5.5V10.5X8.5TRF NEXC474Z5.5V16X9.5TRF NEXC105Z5.5V21X10.5TRF Capacitance Value (F) Discharge 0.1 0.22 0.47 0.047 0.1 0.22 0.47 1.0 Working Voltage (VDC) 3.5 3.5 3.5 5.5 5.5 5,5 5.5 5.5 Holding Voltage (VDC min.) 4.2 4.2 4.2 4.2 4.2 Max. Current ...
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