V-Chip Memory Back-Up Capacitors
V-Chip Memory Back-Up Capacitors
FEATURES • DOUBLE LAYER CONSTRUCTION • POWER BACK-UP FOR CMOS DEVICES • SURFACE MOUNTAB...
Description
V-Chip Memory Back-Up Capacitors
FEATURES DOUBLE LAYER CONSTRUCTION POWER BACK-UP FOR CMOS DEVICES SURFACE MOUNTABLE V-CHIP STYLE LEAD-FREE FINISH CHARACTERISTICS
Rated Voltage Range Rated Capacitance Range Operating Temp. Range Capacitance Tolerance Load Life Test +85°C 240 hours Temperature Cycling (5 cycles, -25 ~ +70°C 3.5 & 5.5VDC 0.047F ~ 0.47F (47,000μF ~ 470,000μF) -40°C ~ +85°C +80%/-20% (Z) Δ Capacitance Change Maximum ESR Current at 30 minutes Δ Capacitance Change Maximum ESR Current at 30 minutes Δ Capacitance Change Maximum ESR Current at 30 minutes
NEXCW Series
RoHS Compliant High Temperature Reflow +260°C
Super Capacitor Application Guide
Within ±30% of initial measured value Less than 200% of the specified maximum value Less than 200% of the specified maximum value Within +80%/-20% of specified value Less than specified maximum value Less than specified maximum value Within ±20% of initial measured value Less than 120% of the specified maximum value Less than 120% of the specified maximum value
Humidity Resistance (240 hours @ 40°C/90% RH)
STANDARD VALUES AND SPECIFICATIONS
NIC P/N NEXCW104Z3.5V10.7X5.5TRF NEXCW224Z3.5V10.7X5.5TRF NEXCW474Z3.5V10.7X8.5TRF NEXCW473Z5.5V10.7X5.5TRF NEXCW104Z5.5V10.7X5.5TRF NEXCW224Z5.5V10.7X8.5TRF Capacitance Value (F) Discharge 0.10 0.22 0.47 0.047 0.10 0.22 Working Voltage (VDC) 3.5 3.5 3.5 5.5 5.5 5.5 Max. Current @ 30 minutes (mA) 0.090 0.200 0.420 0.071 0.150 0.330 Max. ESR @ 1KHz (Ω) 100 50 50 100 50 50
HIGH TEMPERAT...
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