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22RIA160 Dataheets PDF



Part Number 22RIA160
Manufacturers InternationalRectifier
Logo InternationalRectifier
Description MEDIUMPOWERTHYRISTORS
Datasheet 22RIA160 Datasheet22RIA160 Datasheet (PDF)

Bulletin I2403 rev. A 07/00 22RIA SERIES MEDIUM POWER THYRISTORS Stud Version Features Improved glass passivation for high reliability and exceptional stability at high temperature High di/dt and dv/dt capabilities Standard package Low thermal resistance Metric threads version available Types up to 1600V V DRM / V RRM 22A Typical Applications Medium power switching Phase control applications Can be supplied to meet stringent military, aerospace and other high-reliability requirements Major .

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Bulletin I2403 rev. A 07/00 22RIA SERIES MEDIUM POWER THYRISTORS Stud Version Features Improved glass passivation for high reliability and exceptional stability at high temperature High di/dt and dv/dt capabilities Standard package Low thermal resistance Metric threads version available Types up to 1600V V DRM / V RRM 22A Typical Applications Medium power switching Phase control applications Can be supplied to meet stringent military, aerospace and other high-reliability requirements Major Ratings and Characteristics Parameters IT(AV) @ TC IT(RMS) ITSM 2 10 to 120 22 85 35 22RIA 140 to 160 22 85 35 340 355 575 525 1400 to 1600 110 Units A °C A A A A2 s A2 s V µs °C @ 50Hz @ 60Hz 400 420 793 724 100 to 1200 I t @ 50Hz @ 60Hz VDRM/VRRM tq TJ typical - 65 to 125 Case Style TO-208AA (TO-48) www.irf.com 1 22RIA Series Bulletin I2403 rev. A 07/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code 10 20 40 60 22RIA 80 100 120 140 160 V DRM /V RRM , max. repetitive peak and off-state voltage (1) V 100 200 400 600 800 1000 1200 1400 1600 VRSM , maximum nonrepetitive peak voltage (2) V 150 300 500 700 900 1100 1300 1500 1700 I DRM /I RRM max. @ TJ = TJ max. mA 20 10 (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs (2) For voltage pulses with tp ≤ 5ms On-state Conduction Parameter IT(AV) IT(RMS) ITSM Max. average on-state current @ Case temperature Max. RMS on-state current Max. peak, one-cycle non-repetitive surge current 22RIA 10 to 120 22 85 35 400 420 335 355 140 to 160 22 85 35 340 355 285 300 575 525 405 370 5750 1.01 1.17 12.24 10.35 --1.80 Units A °C A A Conditions 180° sinusoidal conduction t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. I2t Maximum I2t for fusing 793 724 560 515 A2s t = 10ms t = 8.3ms t = 10ms t = 8.3ms I2√t Maximum I2√t for fusing voltage 7930 0.83 0.95 14.9 13.4 1.70 --- A2√s V t = 0.1 to 10ms, no voltage reapplied, TJ = TJ max. (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. VT(TO)1 Low level value of threshold VT(TO)2 High level value of threshold voltage rt1 rt2 VTM Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. V Ipk= 70 A, TJ = 25°C TJ = 25°C. Anode supply 6V, resistive load, IH IL Maximum holding current Latching current 130 200 mA 2 www.irf.com 22RIA Series Bulletin I2403 rev. A 07/00 Switching Parameter di/dt Max. rate of rise of turned-on current VDRM ≤ 600V VDRM ≤ 800V VDRM ≤ 1000V VDRM ≤ 1600V tgt trr tq Typical turn-on time Typical reverse recovery time 200 180 160 150 0.9 4 µs TJ = 25°C, at = rated VDRM/VRRM, TJ = 125°C TJ = TJ max., ITM = IT(AV), tp > 200µs, di/dt = -10A/µs Typical turn-off time 110 TJ = TJ max., ITM = IT(AV), tp > 200µs, VR = 100V, di/dt = -10A/µs, dv/dt = 20V/µs linear to 67% VDRM, gate bias 0V-100W (*) tq = 10µsup to 600V, tq = 30µs up to 1600V available on special request. A/µs 22RIA Units Conditions TJ = TJ max., VDM = rated VDRM Gate pulse = 20V, 15Ω, tp = 6µs, tr = 0.1µs max. ITM = (2x rated di/dt) A Blocking Parameter dv/dt Max. critical rate of rise of off-state voltage 22RIA 100 300 (*) Units V/µs Conditions TJ = TJ max. linear to 100% rated VDRM TJ = TJ max. linear to 67% rated VDRM (**) Available with: dv/dt = 1000V/µs, to complete code add S90 i.e. 22RIA160S90. Triggering Parameter PGM IGM -VGM IGT Maximum peak gate power PG(AV) Maximum average gate power Max. peak positive gate current Maximum peak negative gate voltage DC gate current required to trigger 90 60 35 VGT DC gate voltage required to trigger IGD VGD DC gate current not to trigger DC gate voltage not to trigger 3.0 2.0 1.0 2.0 0.2 V V mA V mA TJ = - 65°C TJ = 25°C TJ = 125°C TJ = - 65°C TJ = 25°C TJ = 125°C TJ = TJ max., VDRM = rated value TJ = TJ max. VDRM = rated value Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger current/ voltage are the lowest value which will trigger all units 6V anode-tocathode applied 22RIA 8.0 2.0 1.5 10 Units Conditions W A V TJ = TJ max. TJ = TJ max. TJ = TJ max. www.irf.com 3 22RIA Series Bulletin I2403 rev. A 07/00 Thermal and Mechanical Specification Parameter TJ Tstg Max. operating temperature range Max. storage temperature range 22RIA - 65 to 125 - 65 to 125 0.86 Units Conditions °C °C K/W DC operation R thJC Max. thermal resistance, junction to case R thCS Max. thermal resistance, case to heatsink T Mounting torque to nut 0.35 K/W Mounting surface, smooth, flat and greased to device 25 0.29 2.8 lbf-in kgf.m Nm g (oz) See Outline Table Lubricated threads (Non-lubricated threads) 20(.


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