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OD-100 Dataheets PDF



Part Number OD-100
Manufacturers OPTO DIODE
Logo OPTO DIODE
Description SUPER HIGH-POWER GaAlAs IR EMITTERS
Datasheet OD-100 DatasheetOD-100 Datasheet (PDF)

SUPER HIGH-POWER GaAlAs IR EMITTERS .130 MAX EPOXY .039 .048 .018 OD-100 FEATURES ANODE (CASE) .357 .362 .100 • • • • • Ultra high power output Four wire bonds on die corners Very uniform optical beam Standard 3-lead TO-39 hermetic package Chip size .030 x .030 inches .031 .014 .018 .500 CATHODE .040 45* ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Radiant Intensity, Ie Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ Half Intensity Beam Angle, θ For.

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SUPER HIGH-POWER GaAlAs IR EMITTERS .130 MAX EPOXY .039 .048 .018 OD-100 FEATURES ANODE (CASE) .357 .362 .100 • • • • • Ultra high power output Four wire bonds on die corners Very uniform optical beam Standard 3-lead TO-39 hermetic package Chip size .030 x .030 inches .031 .014 .018 .500 CATHODE .040 45* ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Radiant Intensity, Ie Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ Half Intensity Beam Angle, θ Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C Rise Time Fall Time TEST CONDITIONS IF = 500mA IF = 10A IF = 500mA IF = 50mA MB E MIN 80 TYP 100 1300 60 80 110 1.65 5 30 90 0.7 0.7 880 1000 mW 500mA 10A 5V 260°C -55°C to 100°C 100°C 145°C/W Typical 75°C/W Typical R MAX UNITS mW mW/sr nm nm Deg 2 Volts Volts pF μsec μsec 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com http://www.Datasheet4U.com RoHS ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Power Dissipation1 Peak Forward Current (10μs, 400Hz)2 Reverse Voltage Lead Soldering Temperature (1/16" from case for 10sec) EN D 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C Revision February 26, 2013 OF Continuous Forward Current LI FE DE IF = 500mA IR = 10μA VR = 0V CE 20 13 .297 .302 .200 All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Two cathode pins must be externally connected together. SUPER HIGH-POWER GaAlAs IR EMITTERS 1,100 1,000 900 POWER DISSIPATION (mW) 800 700 600 500 400 300 200 100 0 25 50 75 AMBIENT TEMPERATURE (°C) 100 NO HEAT SINK INFINITE HEAT SINK OD-100 100 PEAK FORWARD CURRENT, Ip (amps) THERMAL DERATING CURVE MAXIMUM PEAK PULSE CURRENT 10 t = 10μs MAXIMUM RATINGS t = 50μs t = 100μs 1 t Ip 0.1 0.01 D= T 0.1 1 DUTY CYCLE, D (%) TYPICAL CHARACTERISTICS 100 DEGRADATION CURVE 100 RADIATION PATTERN RELATIVE POWER OUTPUT (%) 90 IF = 150mA RELATIVE POWER OUTPUT (%) 80 80 IF = 250mA 70 TCASE = 25°C NO PRE BURN-IN PERFORMED IF = 450mA 60 50 101 102 103 STRESS TIME, (hrs) 104 CE 105 0 –100 –80 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 RELATIVE POWER OUTPUT 10 0.5 –50 1,000 POWER OUTPUT, P o (mW) 100 10 1,000 1 10 MB E 60 40 20 –60 –40 –20 0 20 40 BEAM ANGLE, θ(deg) 60 80 100 12 10 FORWARD I-V CHARACTERISTICS DE POWER OUTPUT vs TEMPERATURE FORWARD CURRENT, IF (amps) 6 4 2 0 OF LI FE 8 0 2 4 6 FORWARD VOLTAGE, VF (volts) 8 –25 R 0 25 50 AMBIENT TEMPERATURE (°C) 75 100 SPECTRAL OUTPUT POWER OUTPUT vs FORWARD CURRENT 100 RELATIVE POWER OUTPUT (%) EN D 80 60 40 20 0 750 800 850 900 WAVELENGTH, λ(nm) 950 100 1,000 FORWARD CURRENT, IF (mA) 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013 20 DC PULSE 10μs, 100Hz 13 10 100 10,000 t T .


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