SUPER HIGH-POWER GaAlAs IR EMITTERS
.130 MAX EPOXY .039 .048 .018
OD-100
FEATURES
ANODE (CASE)
.357 .362 .100
• • • • •
Ultra high power output Four wire bonds on die corners Very uniform optical beam Standard 3-lead TO-39 hermetic package Chip size .030 x .030 inches
.031 .014 .018 .500 CATHODE .040 45*
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS Total Power Output, Po Radiant Intensity, Ie Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ Half Intensity Beam Angle, θ Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C Rise Time Fall Time
TEST CONDITIONS IF = 500mA IF = 10A IF = 500mA IF = 50mA
MB E
MIN 80 TYP 100 1300 60 80 110 1.65 5 30 90 0.7 0.7 880 1000 mW 500mA 10A 5V 260°C -55°C to 100°C 100°C 145°C/W Typical 75°C/W Typical
R
MAX UNITS mW mW/sr nm nm Deg 2 Volts Volts pF μsec μsec
750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email:
[email protected], Website: www.optodiode.com
http://www.Datasheet4U.com
RoHS
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1
Peak Forward Current (10μs, 400Hz)2 Reverse Voltage Lead Soldering Temperature (1/16" from case for 10sec)
EN D
1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C
THERMAL PARAMETERS
Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C
Revision February 26, 2013
OF
Continuous Forward Current
LI
FE
DE
IF = 500mA IR = 10μA VR = 0V
CE
20 13
.297 .302
.200
All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Two cathode pins must be externally connected together.
SUPER HIGH-POWER GaAlAs IR EMITTERS
1,100 1,000 900 POWER DISSIPATION (mW) 800 700 600 500 400 300 200 100 0 25 50 75 AMBIENT TEMPERATURE (°C) 100 NO HEAT SINK INFINITE HEAT SINK
OD-100
100 PEAK FORWARD CURRENT, Ip (amps)
THERMAL DERATING CURVE
MAXIMUM PEAK PULSE CURRENT
10
t = 10μs
MAXIMUM RATINGS
t = 50μs t = 100μs
1
t Ip
0.1 0.01
D=
T
0.1 1 DUTY CYCLE, D (%)
TYPICAL CHARACTERISTICS
100
DEGRADATION CURVE
100
RADIATION PATTERN
RELATIVE POWER OUTPUT (%)
90
IF = 150mA
RELATIVE POWER OUTPUT (%)
80
80
IF = 250mA
70
TCASE = 25°C NO PRE BURN-IN PERFORMED IF = 450mA
60
50
101
102
103 STRESS TIME, (hrs)
104
CE
105 0 –100 –80 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 RELATIVE POWER OUTPUT 10 0.5 –50 1,000 POWER OUTPUT, P o (mW) 100 10 1,000
1 10
MB E
60 40 20 –60 –40 –20 0 20 40 BEAM ANGLE, θ(deg) 60 80 100
12 10
FORWARD I-V CHARACTERISTICS
DE
POWER OUTPUT vs TEMPERATURE
FORWARD CURRENT, IF (amps)
6 4 2 0
OF
LI
FE
8
0
2
4 6 FORWARD VOLTAGE, VF (volts)
8
–25
R
0 25 50 AMBIENT TEMPERATURE (°C) 75 100
SPECTRAL OUTPUT
POWER OUTPUT vs FORWARD CURRENT
100
RELATIVE POWER OUTPUT (%)
EN
D
80
60
40
20
0 750
800
850 900 WAVELENGTH, λ(nm)
950
100 1,000 FORWARD CURRENT, IF (mA)
750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email:
[email protected], Website: www.optodiode.com Revision February 26, 2013
20
DC PULSE 10μs, 100Hz
13
10 100 10,000
t T
.