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OD-850FHT

OPTO DIODE

HIGH-POWER GaAlAs IRLED ILLUMINATOR

HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES • Extended operating temperature range • No internal coatings • No derating...


OPTO DIODE

OD-850FHT

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Description
HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES Extended operating temperature range No internal coatings No derating or heat sink required to 80°C Standard 2-lead TO-46 hermetic package OD-850FHT All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ Half Intensity Beam Angle, θ Forward Voltage, VF Reverse Breakdown Voltage, VR Rise Time Fall Time TEST CONDITIONS IF = 100mA IF = 20mA IF = 20mA IF = 20mA IF = 100mA IR = 10μA IFP = 20mA IFP = 20mA 5 MIN 17 TYP 22 850 40 8 1.6 30 20 20 2 MAX UNITS mW nm nm Deg Volts Volts nsec nsec ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Power Dissipation1 Continuous Forward Current Peak Forward Current (10μs, 200Hz) Reverse Voltage Lead Soldering Temperature (1/16" from case for 10sec) 1Derate 2Derate 2 200mW 100mA 300mA 5V 260°C per Thermal Derating Curve above 25°C linearly above 25°C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA 1Heat 2Air 1 -65°C to 150°C 150°C 400°C/W Typical 135°C/W Typical Thermal Resistance, RTHJA2 circulating at a rapid rate to keep case temperature at 25°C transfer minimized by measuring in still air with minimum heat conducting through leads 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected]...




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