OD-880F Datasheet: HIGH-POWER GaAlAs IR EMITTERS





OD-880F HIGH-POWER GaAlAs IR EMITTERS Datasheet

Part Number OD-880F
Description HIGH-POWER GaAlAs IR EMITTERS
Manufacture OPTO DIODE
Total Page 2 Pages
PDF Download Download OD-880F Datasheet PDF

Features: HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME OD-880F FEATURES • High r eliability liquid-phase epitaxially gro wn GaAlAs • 880nm peak emission for o ptimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package Narrow angle for long distance appli cations .041 ANODE (CASE) .209 .220 . 015 .183 .186 .152 .154 .100 .017 . 030 .040 CATHODE .197 .205 .036 45° E LECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Radi ant Intensity, Ie Peak Emission Wavelen gth, λP Spectral Bandwidth at 50%, Δ Half Intensity Beam Angle, θ Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C Rise Time Fall Time TEST CONDITIONS IF = 100mA MB ER MIN 15 120 TYP 17 135 880 80 8 1.55 5 30 17 0.5 0.5 190mW 100mA 3A 5V 260°C -55° C to 100°C 100°C 350°C/W Typical 115 °C/W Typical RoHS 20 MAX UNITS mW mW /sr nm nm Deg 1.9 Volts Volts pF µsec µsec IF = 50mA IF = 100mA IR = 10μA VR = 0V ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Pow.

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HIGH-POWER GaAlAs IR EMITTERS
OD-880F
GLASS
DOME
.183 .152
.186 .154
.030
.040
1.00
MIN.
ANODE
(CASE)
.015
.209
.220
.100
.017
FEATURES
• High reliability liquid-phase epitaxially grown GaAlAs
• 880nm peak emission for optimum matching with
ODD-45W photodiode
• Wide range of linear power output
• Hermetically sealed TO-46 package
• Narrow angle for long distance applications
All surfaces are gold plated. Dimensions are nominal
.041 values in inches unless otherwise specified. Window
caps are welded to the case.
CATHODE
.036
.197
45°
.205
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
Total Power Output, Po
Radiant Intensity, Ie
Peak Emission Wavelength, λP
Spectral Bandwidth at 50%, Δλ
Half Intensity Beam Angle, θ
Forward Voltage, VF
Reverse Breakdown Voltage, VR
Capacitance, C
Rise Time
IF = 100mA
IF = 50mA
IF = 100mA
IR = 10μA
VR = 0V
Fall Time
MIN
15
120
5
TYP
17
135
880
80
8
1.55
30
17
0.5
0.5
MAX
1.9
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1
Continuous Forward Current
Peak Forward Current (10μs, 400Hz)2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
190mW
100mA
3A
5V
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-55°C to 100°C
Maximum Junction Temperature
Thermal Resistance, RTHJA1
Thermal Resistance, RTHJA2
100°C
350°C/W Typical
115°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
UNITS
mW
mW/sr
nm
nm
Deg
Volts
Volts
pF
µsec
µsec
Revision February 26, 2013
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
http://www.Datasheet4U.com

     






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