OD-880F

HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME OD-880F FEATURES High reliability liquid-phase epitaxially grown GaAlAs 880nm peak emission for optimum matching with ODD-45W photodiode Wide range of linear power output Hermetically sealed TO-46 package Narrow angle for long distance applications .041 ANODE (CASE) .209 .220 .015 .183 .186 .152 .154 .100 .017 .030 .040 CATHODE .197 .205 .036 45° ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Radiant Intensity, Ie Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ Half Intensity Beam Angle, θ Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C Rise Time Fall Time TEST CONDITIONS IF = 100mA MB ER MIN 15 120 TYP 17 135 880 80 8 1.55 5 30 17 0.5 0.5 190mW 100mA 3A 5V 260°C -55°C to 100°C 100°C 350°C/W Typical 115°C/W Typical RoHS 20 MAX UNITS mW mW/sr nm nm Deg 1.9 Volts Volts pF µsec µsec IF = 50mA IF = 100mA IR = 10μA VR = 0V ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Power Dissipation1 Peak Forward Current (10μs, 400Hz)2 Reverse Voltage Lead Soldering Temperature (1/16" from case for 10sec) EN THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C D 1Derate per Thermal Derating Curve above 25°C 2Derate linearly a...