OD-880FHT EMITTERS Datasheet

OD-880FHT Datasheet, PDF, Equivalent


Part Number

OD-880FHT

Description

HIGH TEMPERATURE GaAlAs IR EMITTERS

Manufacture

OPTO DIODE

Total Page 2 Pages
Datasheet
Download OD-880FHT Datasheet


OD-880FHT
HIGH TEMPERATURE GaAlAs IR EMITTERS
OD-880FHT
GLASS
DOME
.183 .152
.186 .154
.030
.040
1.00
MIN.
ANODE
(CASE)
.015
.209
.220
.197
.205
.100
.017
CATHODE
.041
.036
45°
FEATURES
• Extended operating temperature range
• No internal coatings
• No derating or heat sink required to 80°C
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, Po
Peak Emission Wavelength, λP
Spectral Bandwidth at 50%, Δλ
Half Intensity Beam Angle, θ
Forward Voltage, VF
Reverse Breakdown Voltage, VR
Capacitance, C
Rise Time
TEST CONDITIONS
IF = 100mA
IF = 50mA
IF = 100mA
IR = 10μA
VR = 0V
Fall Time
MIN
TYP
MAX
UNITS
68
mW
880 nm
80 nm
8 Deg
1.55 1.9 Volts
5 30
Volts
17 pF
0.5 μsec
0.5 μsec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1
Continuous Forward Current
Peak Forward Current (10μs, 400Hz)2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
190mW
100mA
3A
5V
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-65°C TO 150°C
Maximum Junction Temperature
Thermal Resistance, RTHJA1
Thermal Resistance, RTHJA2
150°C
370°C/W Typical
120°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
Revision February 26, 2013
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
http://www.Datasheet4U.com

OD-880FHT
HIGH TEMPERATURE GaAlAs IR EMITTERS
OD-880FHT
THERMAL DERATING CURVE
200
180
160
INFINITE
HEAT SINK
140
120 NO
HEAT SINK
100
80
60
40
20
0
25
50 75 100 125
AMBIENT TEMPERATURE (°C)
150
DEGRADATION CURVE
100
90
IF = 20mA
IF = 50mA
80
MAXIMUM PEAK PULSE CURRENT
10
t = 10μs
1 t = 100μs
t = 500μs
0.1
Ip
0.01
0.01
t
D
=
t
T
T
0.1 1 10
DUTY CYCLE, D (%)
RADIATION PATTERN
100
80
60
100
70
60
50
101
TCASE = 25°C
NO PRE BURN-IN PERFORMED
IF = 100mA
102 103
STRESS TIME, (hrs)
104
105
FORWARD I-V CHARACTERISTICS
4
3
2
1
0
01 2 34
FORWARD VOLTAGE, VF (volts)
SPECTRAL OUTPUT
100
5
6
40
20
0
–25 –20 –15 –10 –5
05
10 15 20 25
BEAM ANGLE, θ(deg)
POWER OUTPUT vs TEMPERATURE
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
–50
–25 0 25 50 75
AMBIENT TEMPERATURE (°C)
100
POWER OUTPUT vs FORWARD CURRENT
1,000
80
100
60
40
20
0
750
10
800 850 900 950
WAVELENGTH, λ(nm)
1,000
1
10
DC
PULSE
10μs, 100Hz
100 1,000
FORWARD CURRENT, IF (mA)
10,000
Revision February 26, 2013
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com


Features HIGH TEMPERATURE GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME ANODE (CASE) .015 .209 .220 OD-880FHT FEATURES • Extended operating temperature range • No inte rnal coatings • No derating or heat s ink required to 80°C All surfaces are gold plated. Dimensions are nominal val ues in inches unless otherwise specifie d. Window caps are welded to the case. .183 .186 .152 .154 .100 .041 .017 .030 .040 CATHODE .197 .205 .036 45° RoHS ELECTRO-OPTICAL CHARACTERISTICS A T 25°C PARAMETERS Total Power Output, Po Peak Emission Wavelength, λP Spectr al Bandwidth at 50%, Δλ Half Intensit y Beam Angle, θ Forward Voltage, VF Re verse Breakdown Voltage, VR Capacitance , C Rise Time Fall Time TEST CONDITION S IF = 100mA IF = 50mA MB E MIN 6 TYP 8 880 80 8 1.55 30 17 0.5 0.5 5 190mW 1 00mA 3A 5V 260°C -65°C TO 150°C 150 C 370°C/W Typical 120°C/W Typical R MAX UNITS mW nm nm Deg 1.9 Volts Volts pF μsec μsec 750 Mitchell Road, Newb ury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@o.
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