OD-880WHT EMITTERS Datasheet

OD-880WHT Datasheet, PDF, Equivalent


Part Number

OD-880WHT

Description

HIGH TEMPERATURE GaAlAs IR EMITTERS

Manufacture

OPTO DIODE

Total Page 2 Pages
Datasheet
Download OD-880WHT Datasheet


OD-880WHT
HIGH TEMPERATURE GaAlAs IR EMITTERS
OD-880WHT
GLASS
.006 HIGH
MAX
.015
1.00
MIN.
ANODE
(CASE)
.209
.220
.183 .152
.187 .156
.098
.112
.143
.150
.100
.017
CATHODE
.041
.036
45°
FEATURES
• Extended operating temperature range
• No internal coatings
• No derating or heat sink required to 80°C
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, Po
Peak Emission Wavelength, λP
Spectral Bandwidth at 50%, Δλ
Half Intensity Beam Angle, θ
Forward Voltage, VF
Reverse Breakdown Voltage, VR
Capacitance, C
Rise Time
Fall Time
TEST CONDITIONS
IF = 100mA
IF = 50mA
IF = 100mA
IR = 10μA
VR = 0V
MIN
TYP
MAX
UNITS
79
mW
880 nm
80 nm
80 Deg
1.55 1.9 Volts
5 30
Volts
17 pF
0.5 μsec
0.5 μsec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1
Continuous Forward Current
Peak Forward Current (10μs, 300Hz)2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
190mW
100mA
3A
5V
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-65°C TO 150°C
Maximum Junction Temperature
Thermal Resistance, RTHJA1
Thermal Resistance, RTHJA2
150°C
370°C/W Typical
120°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
Revision February 26, 2013
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
http://www.Datasheet4U.com

OD-880WHT
HIGH TEMPERATURE GaAlAs IR EMITTERS
OD-880WHT
THERMAL DERATING CURVE
200
180
160
INFINITE
HEAT SINK
140
120 NO
HEAT SINK
100
80
60
40
20
0
25
50 75 100 125
AMBIENT TEMPERATURE (°C)
150
DEGRADATION CURVE
100
90
IF = 20mA
IF = 50mA
80
MAXIMUM PEAK PULSE CURRENT
10
t = 10μs
1 t = 100μs
t = 500μs
0.1
Ip
0.01
0.01
t
D
=
t
T
T
0.1 1 10
DUTY CYCLE, D (%)
RADIATION PATTERN
100
80
60
100
70
60
50
101
TCASE = 25°C
NO PRE BURN-IN PERFORMED
IF = 100mA
102 103
STRESS TIME, (hrs)
104
105
FORWARD I-V CHARACTERISTICS
4
3
2
1
0
012 34
FORWARD VOLTAGE, VF (volts)
SPECTRAL OUTPUT
100
5
6
40
20
0
–100 –80 –60 –40 –20 0 20 40 60 80 100
BEAM ANGLE, θ(deg)
POWER OUTPUT vs TEMPERATURE
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
–50
–25 0 25 50 75
AMBIENT TEMPERATURE (°C)
100
POWER OUTPUT vs FORWARD CURRENT
1,000
80
100
60
40
20
0
750
10
800 850 900 950
WAVELENGTH, λ(nm)
1,000
1
10
DC
PULSE
10μs, 100Hz
100 1,000
FORWARD CURRENT, IF (mA)
10,000
Revision February 26, 2013
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com


Features HIGH TEMPERATURE GaAlAs IR EMITTERS FEAT URES ANODE (CASE) .209 .220 OD-880WHT GLASS .006 HIGH MAX 1.00 MIN. .015 Extended operating temperature range • No internal coatings • No derati ng or heat sink required to 80°C All s urfaces are gold plated. Dimensions are nominal values in inches unless otherw ise specified. Window caps are welded t o the case. .183 .152 .187 .156 .017 . 098 .112 .100 .041 CATHODE .143 .150 .036 45° RoHS ELECTRO-OPTICAL CHARAC TERISTICS AT 25°C PARAMETERS Total Pow er Output, Po Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ Ha lf Intensity Beam Angle, θ Forward Vol tage, VF Reverse Breakdown Voltage, VR Capacitance, C Rise Time Fall Time IF = 50mA TEST CONDITIONS IF = 100mA MB E MIN 7 TYP 9 880 80 80 1.55 30 17 0.5 0 .5 5 190mW 100mA 3A 5V 260°C -65°C TO 150°C 150°C 370°C/W Typical 120°C/ W Typical R MAX UNITS mW nm nm Deg 1.9 Volts Volts pF μsec μsec 750 Mitchel l Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Em.
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