NVF2955

NTF2955, NVF2955 MOSFET – Power, Single, P-Channel, SOT-223 -60 V, -2.6 A Features Design for low RDS(on) Withstands High Energy in Avalanche and Commutation Modes AEC−Q101 Qualified − NVF2955 These Devices are Pb−Free and are RoHS Compliant Applications Power Supplies PWM Motor Control Converters Power Management MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −60 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current (Note 1) Steady TA = 25°C ID State TA = 85°C −2.6 A −2.0 Power Dissipation (Note 1) Steady TA = 25°C PD State 2.3 W Continuous Drain Current (Note 2) Power Dissipation (Note 2) Steady TA = 25°C ID State TA = 85°C TA = 25°C PD −1.7 A −1.3 1.0 W Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Single Pulse Drain−to−Source Avalanche Energy (VDD = 25 V, VG = 10 V, IPK = 6.7 A, L = 10 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 seconds) IDM −17 A TJ, −55 to °C TSTG 175 EAS 225 mJ TL 260 °C THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Tab (Drain) − Steady State (Note 2) RqJC 14 Junction−to−Ambient − Steady State (Note 1) RqJA 65 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, dama...