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JS28F00AP30BFx Dataheets PDF



Part Number JS28F00AP30BFx
Manufacturers MICRON
Logo MICRON
Description Micron Parallel NOR Flash Embedded Memory
Datasheet JS28F00AP30BFx DatasheetJS28F00AP30BFx Datasheet (PDF)

512Mb, 1Gb, 2Gb: P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F512P30BFx, JS28F512P30EFx, JS28F512P30TFx, PC28F512P30BFx, PC28F512P30EFx, PC28F512P30TFx JS28F00AP30BFx, JS28F00AP30TFx, JS28F00AP30EFx, PC28F00AP30BFx, PC28F00AP30TFx, PC28F00AP30EFx, RC28F00AP30BFx, RC28F00AP30TFx, PC28F00BP30EFx Features • High performance • Easy BGA package features – 100ns initial access for 512Mb, 1Gb Easy BGA – 105ns initial access for 2Gb Easy BGA – 25ns 16-word asychronous pag.

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512Mb, 1Gb, 2Gb: P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F512P30BFx, JS28F512P30EFx, JS28F512P30TFx, PC28F512P30BFx, PC28F512P30EFx, PC28F512P30TFx JS28F00AP30BFx, JS28F00AP30TFx, JS28F00AP30EFx, PC28F00AP30BFx, PC28F00AP30TFx, PC28F00AP30EFx, RC28F00AP30BFx, RC28F00AP30TFx, PC28F00BP30EFx Features • High performance • Easy BGA package features – 100ns initial access for 512Mb, 1Gb Easy BGA – 105ns initial access for 2Gb Easy BGA – 25ns 16-word asychronous page read mode – 52 MHz (Easy BGA) with zero WAIT states and 17ns clock-to-data output synchronous burst read mode – 4-, 8-, 16-, and continuous word options for burst mode • TSOP package features – 110ns initial access for 512Mb, 1Gb TSOP • Both Easy BGA and TSOP package features – Buffered enhanced factory programming (BEFP) at 2 MB/s (TYP) using a 512-word buffer – 1.8V buffered programming at 1.46 MB/s (TYP) using a 512-word buffer • Architecture – MLC: highest density at lowest cost – Symmetrically blocked architecture (512Mb, 1Gb, 2Gb) – Asymmetrically blocked architecture (512Mb, 1Gb); four 32KB parameter blocks: top or bottom configuration – 128KB main blocks – Blank check to verify an erased block • Voltage and power – VCC (core) voltage: 1.7–2.0V – VCCQ (I/O) voltage: 1.7–3.6V – Standy current: 70µA (TYP) for 512Mb; 75µA (TYP) for 1Gb – 52 MHz continuous synchronous read current: 21mA (TYP), 24mA (MAX) • Security – One-time programmable register: 64 OTP bits, programmed with unique information from Micron; 2112 OTP bits available for customer programming – Absolute write protection: V PP = V SS – Power-transition erase/program lockout – Individual zero-latency block locking – Individual block lock-down – Password access • Software – 25μs (TYP) program suspend – 25μs (TYP) erase suspend – Flash Data Integrator optimized – Basic command set and extended function Interface (EFI) command set compatible – Common flash interface • Density and Packaging – 56-lead TSOP package (512Mb, 1Gb) – 64-ball Easy BGA package (512Mb, 1Gb, 2Gb) – 16-bit wide data bus • Quality and reliabilty – JESD47 compliant – Operating temperature: –40°C to +85°C – Minimum 100,000 ERASE cycles per block – 65nm process technology PDF: 09005aef845667b3 p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN 1 Products and specifications discussed herein are subject to change by Micron without notice. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. http://www.Datasheet4U.com 512Mb, 1Gb, 2Gb: P30-65nm Features Discrete and MCP Part Numbering Information Devices are shipped from the factory with memory content bits erased to 1. For available options, such as packages or for further information, contact your Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specification comparison by device type is available at www.micron.com/products. Contact the factory for devices not found. Note: Not all part numbers listed here are available for ordering. Table 1: Discrete Part Number Information Part Number Category Package Category Details JS = 56-lead TSOP, lead free PC = 64-ball Easy BGA, lead-free RC = 64-ball Easy BGA, leaded Product Line Density 28F = Micron Flash memory 512 = 512Mb 00A = 1Gb 00B = 2Gb P30 (VCC = 1.7–2.0V; VCCQ = 1.7–3.6V) B/T = Bottom/Top parameter E = Symmetrical Blocks F = 65nm * 1. The last digit is assigned randomly to cover packaging media, features, or other specific configuration information. Sample part number: JS28F512P30EF* Product Family Parameter Location Lithography Features Note: Table 2: Standard Part Numbers Density 512Mb Configuration Bottom boot Top boot Uniform 1Gb Bottom boot Top boot Uniform 2Gb Uniform Medium Tray Tape & Reel Tray Tape & Reel Tray Tape & Reel Tray Tape & Reel Tray Tape & Reel Tray Tape & Reel Tray Tape & Reel JS JS28F512P30BFA – JS28F512P30TFA – JS28F512P30EFA – JS28F00AP30BFA – JS28F00AP30BTFA – JS28F00AP30EFA – – – PC PC28F512P30BFA PC28F512P30BFB PC28F512P30TFA PC28F512P30TFB PC28F512P30EFA – PC28F00AP30BFA PC28F00AP30BFB PC28F00AP30TFA – PC28F00AP30EFA – PC28F00BP33EFA – RC – – – – – – RC28F00AP30BFA – RC28F00AP30TFA – – – – – PDF: 09005aef845667b3 p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. 512Mb, 1Gb, 2Gb: P30-65nm Features Contents General Description ......................................................................................................................................... 7 Virtual Chip Enable Description ........................................................................................................................ 8 Memory Map ...................................................................................................................................................


JS28F512P30TFx JS28F00AP30BFx JS28F00AP30TFx


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