Document
SPC5604
N & P Pair Enhancement Mode MOSFET
DESCRIPTION The SPC5604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. FEATURES N-Channel 40V/10A,RDS(ON)= 24mΩ@VGS= 10V 40V/ 8A,RDS(ON)= 28mΩ@VGS= 4.5V 40V/ 6A,RDS(ON)= 32mΩ@VGS= 2.5V P-Channel -40V/-10A,RDS(ON)= 32mΩ@VGS=- 10V -40V/- 8A,RDS(ON)= 42mΩ@VGS=- 4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252-5L package design APPLICATIONS Power Management in Note book Battery Powered System DC/DC Converter LCD Display inverter
PIN CONFIGURATION ( TO-252-5L ) ( TO-252-4L )
PART MARKING
2012/10/22 Ver.2
Page 1
http://www.Datasheet4U.com
SPC5604
N & P Pair Enhancement Mode MOSFET
PIN DESCRIPTION
Pin 1 2 3 4 5
Description(TO-252-5L) Source 1 Gate 1 Drain1/Drain2 Source 2 Gate 2
Description(TO-252-4L) Source 1 Gate 1 Drain Source 2 Gate 2
ORDERING INFORMATION Part Number SPC5604T255RGB SPC5604T254RGB Package T0-252-5L T0-252-4L Part Marking SPC5604 SPC5604
※ SPC5604T255RGB: 13” Tape Reel ; Pb – Free ; Halogen – Free ※ SPC5604T254RGB :13” Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Typical Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient T ≤ 10sec Steady State TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol N-Channel VDSS VGSS ID IDM IS PD TJ TSTG RθJA P-Channel Unit
40 ±20 10.0 7.0 25 2.3 2.5 1.6 -55/150 -55/150 50 80
-40 ±20 -10.0 -7.0 -25 -2.3 2.8 1.8
V V A A A W ℃ ℃
52 80
℃/W
2012/10/22 Ver.2
Page 2
SPC5604
N & P Pair Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS ( NMOS ) (TA=25℃ Unless otherwise noted)
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS IDSS ID(on) RDS(on) gfs VSD VDS=0V,VGS=±20V VDS=32V,VGS=0V VDS=32V,VGS=0V TJ=85℃ VDS= 5V,VGS =4.5V VGS= 10V,ID=10A VGS=4.5V,ID= 8A VGS=2.5V,ID= 6A VDS=15V,ID=6.2A IS=2.3A,VGS =0V
40 0.5 1.0 ±100 1 10 10 0.018 0.022 0.026 13 0.8 0.024 0.028 0.032 1.2
V nA uA A Ω S V
Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDD=20V,RL=4Ω ID≡5.0A,VGEN=10V RG=1Ω VDS=20V,VGS=0V f=1MHz VDS=20V,VGS=4.5V ID= 5A
10 2.8 3.2 850 110 75 6 10 20 6
14 nC
pF 12 20 36 12 nS
2012/10/22 Ver.2
Page 3
SPC5604
N & P Pair Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS ( PMOS ) (TA=25℃ Unless otherwise noted)
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V(BR)DSS VGS=0V,ID=-250uA VGS(th) VDS=VGS,ID=-250uA IGSS IDSS ID(on) RDS(on) gfs VSD VDS=0V,VGS=±20V VDS=-32V,VGS=0V VDS=-32V,VGS=0V TJ=85℃ VDS= -5V,VGS =-4.5V VGS=-10V,ID=-10A VGS=-4.5V,ID=- 8A VDS=-15V,ID=-5.7A IS=-2.3A,VGS =0V
-40 -0.8 -2.5 ±100 -1 -10 -10 0.028 0.038 13 -0.8 0.032 0.042 -1.2
V nA uA A Ω S V
Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDD=-20V,RL=4Ω ID≡-5.0A,VGEN=-4.5V RG=1Ω VDS=-20V,VGS=0V f=1MHz VDS=-20V,VGS=-4.5V ID= -5.0A
13 4.5 6.5 1100 145 115 40 55 30 12
20 nC
pF 80 100 60 20 nS
2012/10/22 Ver.2
Page 4
SPC5604
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( NMOS )
2012/10/22 Ver.2
Page 5
SPC5604
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( NMOS )
2012/10/22 Ver.2
Page 6
SPC5604
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( NMOS )
2012/10/22 Ver.2
Page 7
SPC5604
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( PMOS )
2012/10/22 Ver.2
Page 8
SPC5604
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( PMOS )
2012/10/22 Ver.2
Page 9
SPC5604
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( PMOS )
2012/10/22 Ver.2
Page 10
SPC5604
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTI.