SPN12T20

SPN12T20 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN12T20 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN12T20 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  High Frequency Small Power Switching for MB/NB/VGA  Network DC/DC Power System  Load Switch FEATURES  200V/9A,RDS(ON)=210mΩ@VGS=10V  High density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  TO-252-2L package design PIN CONFIGURATION TO-252-2L 2020/09/21 Ver.3 PART MARKING Page 1 SPN12T20 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN12T20T252RGB TO-252-2L ※ SPN12T20T252RGB : Tape Reel ; Pb – Free ; Halogen - Free Part Marking SPN12T20 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Symbol VDSS Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=100℃ VGSS ID IDM Avalanche Energy, Single [email protected], Vdd=25V, IAS=10A EAS Power Dissipation TA=25℃ PD Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TJ TSTG RθJ...