SPN2038
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN2038 is the N-Channel logic enhancement mode power field e...
SPN2038
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN2038 is the N-Channel logic enhancement mode power field effect
transistor which is produced with high cell density DMOS trench technology. The SPN2038 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS Power Management in Note book Powered System DC/DC Converter Load Switch
FEATURES
20V/14A, RDS(ON)=20mΩ@VGS=4.5V 20V/7A, RDS(ON)=28mΩ@VGS=2.5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability TO-252-2L package design
PIN CONFIGURATION TO-252-2L
PART MARKING
2020/04/28 Ver.3
Page 1
SPN2038
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G D S
Description Gate Drain
Source
ORDERING INFORMATION
Part Number
Package
SPN2038T252RGB
TO-252-2L
※ SPN2038T252RGB : Tape Reel ; Pb – Free ; Halogen - Free
Part Marking SPN2038
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage Continuous Drain Current Pulsed Drain Current
TC=25℃ TC=100℃
Power Dissipation
TC=25℃
Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Case
Symbol VDSS VGSS
ID
IDM PD TJ TSTG RθJC
Typical 20
±16 28 18 70
25 -55/150 -55/150
5
Unit V V
A
A W ...