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BCX56M3 Dataheets PDF



Part Number BCX56M3
Manufacturers CYStech Electronics
Logo CYStech Electronics
Description General Purpose NPN Transistor
Datasheet BCX56M3 DatasheetBCX56M3 Datasheet (PDF)

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C304M3 Issued Date : 2007.04.23 Revised Date : 2013.08.07 Page No. : 1/7 BCX56M3 Features • High breakdown voltage, BVCEO≥ 100V • Large continuous collector current capability • Low collector saturation voltage • Complementary to BCX53M3 • Pb-free lead plating package BVCEO IC VCESAT 100V 1A 0.13V(typ.) Symbol BCX56M3 Outline SOT-89 B:Base C:Collector E:Emitter B C E Absolute Maximum Ratings (Ta=25°C) .

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C304M3 Issued Date : 2007.04.23 Revised Date : 2013.08.07 Page No. : 1/7 BCX56M3 Features • High breakdown voltage, BVCEO≥ 100V • Large continuous collector current capability • Low collector saturation voltage • Complementary to BCX53M3 • Pb-free lead plating package BVCEO IC VCESAT 100V 1A 0.13V(typ.) Symbol BCX56M3 Outline SOT-89 B:Base C:Collector E:Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation Symbol VCBO VCEO VEBO IC ICP Pd Limits 100 100 5 1 2 0.6 1 2 (Note 1) (Note 2) Unit V V V A A W W W Junction Temperature Tj Storage Temperature Tstg Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm 2 . When mounted on ceramic with area measuring 40×40×1 mm BCX56M3 150 -55~+150 °C °C CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE 1 *hFE 2 *hFE 3 fT Cob Min. 100 100 5 80 100 40 150 Typ. 0.13 230 6 Max. 100 20 0.3 1 400 15 Unit V V V nA nA V V MHz pF Spec. No. : C304M3 Issued Date : 2007.04.23 Revised Date : 2013.08.07 Page No. : 2/7 Test Conditions IC=100μA IC=10mA IE=10μA VCB=80V VEB=4V IC=500mA, IB=50mA VCE=2V, IC=500mA VCE=2V, IC=5mA VCE=2V, IC=150mA VCE=2V, IC=500mA VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE 2 Rank Range 16 100~250 25 160~400 Ordering Information Device BCX56M3 Package SOT-89 (Pb-free lead plating package) Shipping 1000 pcs / Tape & Reel Marking DF BCX56M3 CYStek Product Specification CYStech Electronics Corp. Typical Characteristics Current Gain vs Collector Current 1000 HFE VCE=5V Spec. No. : C304M3 Issued Date : 2007.04.23 Revised Date : 2013.08.07 Page No. : 3/7 Saturation Voltage vs Collector Current 1000 VCESAT Saturation Voltage-(mV) Current Gain---HFE IC=25IB 100 VCE=2V 100 IC=20IB VCE=1V IC=10IB 10 1 10 100 Collector Current ---IC(mA) 1000 10 1 10 100 Collector Current ---IC(mA) 1000 Saturation Voltage vs Collector Current 10000 On Voltage vs Collector Current 10000 VBEON@VCE=2V On Voltage-(mV) VBESAT@IC=10IB Saturation Voltage-(mV) 1000 1000 100 1 10 100 1000 10000 100 1 Collector Current--- IC(mA) 10 100 1000 Collector Current--- IC(mA) 1000 0 Transition Frequency vs Collector Current 1000 Transition Frequency---fT(MHz) VCE=10V f=1MHz Capacitance Characteristics 100 f=1MHz Capacitance---Cob(pF) 1000 100 10 10 1 10 100 Collector Current---IC (mA) 1 0.1 1 10 Collector Base Voltage-- VCB(V) 100 BCX56M3 CYStek Product Specification CYStech Electronics Corp. Typical Characteristics(Cont.) Power Derating Curves 2.5 2 1.5 1 0.5 0 0 25 50 75 100 125 150 Ambient Temperature---TA(℃) 175 200 Spec. No. : C304M3 Issued Date : 2007.04.23 Revised Date : 2013.08.07 Page No. : 4/7 Power Dissipation---PD(W) See Note 2 on page 1 See Note 1 on page 1 BCX56M3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C304M3 Issued Date : 2007.04.23 Revised Date : 2013.08.07 Page No. : 5/7 Carrier Tape Dimension BCX56M3 CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Spec. No. : C304M3 Issued Date : 2007.04.23 Revised Date : 2013.08.07 Page No. : 6/7 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds 240 +0/-5 °C 10-30 seconds 6°C/second max. 6 minutes max. Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BCX56M3 CYStek Product Specification CYStech Electronics Corp. SOT-89 Dimension A Spec. No. : C304M3 Issued Date : 2007.04.23 Revised Date : 2013.08.07 Page No. : 7/7 Marking: 1 2 C 3 Device Code □□□ B D Style: Pin 1. Base 2. Collector 3. Emitter E F G I 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 DIM A B C D E Inches Min. Max. 0.1732 0.1811 0.1551 0.1673 0.0610 REF 0.0906 0.1024 0.0126 0.0205 Millimeters Min. Max. 4.40 4.60 3.94 4.25 1.55 REF 2.30 2.60 0.32 0.52 DIM F G H I Inches Min. Max. 0.0591 TYP 0.1181 TYP 0.0551 0.0630 0.0138 0.0173 DF H Date Code Millimeters Min. Max. 1.50 TYP 3.00 TYP 1.40 1.60 0.35 0.44 Notes: 1.Controlling dimens.


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