Document
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C304M3 Issued Date : 2007.04.23 Revised Date : 2013.08.07 Page No. : 1/7
BCX56M3
Features
• High breakdown voltage, BVCEO≥ 100V • Large continuous collector current capability • Low collector saturation voltage • Complementary to BCX53M3 • Pb-free lead plating package
BVCEO IC VCESAT
100V 1A 0.13V(typ.)
Symbol
BCX56M3
Outline
SOT-89
B:Base C:Collector E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse)
Power Dissipation
Symbol VCBO VCEO VEBO IC ICP
Pd
Limits 100 100 5 1 2
0.6 1 2
(Note 1) (Note 2)
Unit V V V A A
W W W
Junction Temperature Tj Storage Temperature Tstg Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm
2 . When mounted on ceramic with area measuring 40×40×1 mm
BCX56M3
150 -55~+150
°C °C
CYStek Product Specification
http://www.Datasheet4U.com
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE 1 *hFE 2 *hFE 3 fT Cob Min. 100 100 5 80 100 40 150 Typ. 0.13 230 6 Max. 100 20 0.3 1 400 15 Unit V V V nA nA V V MHz pF
Spec. No. : C304M3 Issued Date : 2007.04.23 Revised Date : 2013.08.07 Page No. : 2/7
Test Conditions IC=100μA IC=10mA IE=10μA VCB=80V VEB=4V IC=500mA, IB=50mA VCE=2V, IC=500mA VCE=2V, IC=5mA VCE=2V, IC=150mA VCE=2V, IC=500mA VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE 2
Rank Range 16 100~250 25 160~400
Ordering Information
Device BCX56M3 Package SOT-89 (Pb-free lead plating package) Shipping 1000 pcs / Tape & Reel Marking DF
BCX56M3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Current Gain vs Collector Current
1000
HFE VCE=5V
Spec. No. : C304M3 Issued Date : 2007.04.23 Revised Date : 2013.08.07 Page No. : 3/7
Saturation Voltage vs Collector Current
1000
VCESAT
Saturation Voltage-(mV)
Current Gain---HFE
IC=25IB
100
VCE=2V
100
IC=20IB
VCE=1V
IC=10IB
10 1 10 100 Collector Current ---IC(mA) 1000
10 1 10 100 Collector Current ---IC(mA) 1000
Saturation Voltage vs Collector Current
10000
On Voltage vs Collector Current
10000 VBEON@VCE=2V On Voltage-(mV)
VBESAT@IC=10IB Saturation Voltage-(mV)
1000
1000
100 1 10 100 1000 10000
100 1
Collector Current--- IC(mA)
10 100 1000 Collector Current--- IC(mA)
1000 0
Transition Frequency vs Collector Current
1000 Transition Frequency---fT(MHz)
VCE=10V f=1MHz
Capacitance Characteristics
100 f=1MHz Capacitance---Cob(pF) 1000
100
10
10 1 10 100 Collector Current---IC (mA)
1 0.1 1 10 Collector Base Voltage-- VCB(V) 100
BCX56M3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Power Derating Curves
2.5 2 1.5 1 0.5 0 0 25 50 75 100 125 150 Ambient Temperature---TA(℃) 175 200
Spec. No. : C304M3 Issued Date : 2007.04.23 Revised Date : 2013.08.07 Page No. : 4/7
Power Dissipation---PD(W)
See Note 2 on page 1
See Note 1 on page 1
BCX56M3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C304M3 Issued Date : 2007.04.23 Revised Date : 2013.08.07 Page No. : 5/7
Carrier Tape Dimension
BCX56M3
CYStek Product Specification
CYStech Electronics Corp.
Recommended wave soldering condition
Product Pb-free devices Peak Temperature 260 +0/-5 °C
Spec. No. : C304M3 Issued Date : 2007.04.23 Revised Date : 2013.08.07 Page No. : 6/7
Soldering Time 5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature
Sn-Pb eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds 240 +0/-5 °C 10-30 seconds 6°C/second max. 6 minutes max.
Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BCX56M3
CYStek Product Specification
CYStech Electronics Corp.
SOT-89 Dimension
A
Spec. No. : C304M3 Issued Date : 2007.04.23 Revised Date : 2013.08.07 Page No. : 7/7
Marking:
1
2
C
3
Device Code □□□
B
D
Style: Pin 1. Base 2. Collector 3. Emitter
E F G
I
3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3
DIM A B C D E
Inches Min. Max. 0.1732 0.1811 0.1551 0.1673 0.0610 REF 0.0906 0.1024 0.0126 0.0205
Millimeters Min. Max. 4.40 4.60 3.94 4.25 1.55 REF 2.30 2.60 0.32 0.52
DIM F G H I
Inches Min. Max. 0.0591 TYP 0.1181 TYP 0.0551 0.0630 0.0138 0.0173
DF
H
Date Code
Millimeters Min. Max. 1.50 TYP 3.00 TYP 1.40 1.60 0.35 0.44
Notes: 1.Controlling dimens.