BSS138C3

CYStech Electronics Corp. 50V N-CHANNEL Enhancement Mode MOSFET Spec. No. : C834C3 Issued Date : 2012.06.25 Revised Date : Page No. : 1/8 BSS138C3 Features Simple drive requirement Small package outline Pb-free package BVDSS ID RDSON@VGS=10V, ID=220mA RDSON@VGS=4.5V, ID=220mA RDSON@VGS=2.5V,ID=220mA RDSON@VGS=4V,ID=100mA RDSON@VGS=2.5V,ID=80mA 50V 250mA 1.1Ω(typ) 1.3Ω(typ) 1.7Ω(typ) 1.3Ω(typ) 1.6Ω(typ) Symbol BSS138C3 Outline SOT-523 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=4.5V Continuous Drain Current @ TA=85°C, VGS=4.5V Pulsed Drain Current (Notes 1, 2) TA=25℃ Maximum Power Dissipation (Note 3) Symbol VDS VGS (Note 3) (Note 3) ID IDM PD Limits 50 ±20 250 180 1 150 80 1500 (Note 4) -55~+150 Unit V mA A mW V °C TA=85℃ ESD susceptibility Operating Junction and Storage Temperature Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on FR-4 board. 4. Human body model, 1.5kΩ in series with 100pF Tj, Tstg BSS138C3 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted) Symbol Rth,ja Spec. No. : C834C3 Issued Date : 2012.06.25 Revised Date : Page No. : 2/8 Limit 833 Unit °C/W Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Static BVDSS VGS(th) ...